触发激光脉冲宽度对砷化镓光电导半导体开关抖动时间的影响。

Effects of trigger laser pulse width on the jitter time of GaAs photoconductive semiconductor switch.

机构信息

Applied Physics Department, Xi’an University of Technology, Xi’an 710048, China.

出版信息

Opt Lett. 2013 Jul 1;38(13):2330-2. doi: 10.1364/OL.38.002330.

DOI:10.1364/OL.38.002330

PMID:23811918

Abstract

The effects of trigger laser pulse width on the jitter time of a GaAs photoconductive semiconductor switch (PCSS) is investigated in the experiment. The laser is split into two optical beams by a cross grating to excite two 3 mm gap GaAs PCSSs in parallel at the same time. This work reveals that the jitter time of the GaAs PCSS is reduced as the trigger laser pulse width decreases. Our results overcome a significant obstacle that hinders the testing and theory of GaAs PCSSs in high-time-precision synchronous control.

摘要

实验研究了触发激光脉冲宽度对砷化镓光电导开关（PCSS）抖动时间的影响。激光通过十字光栅分为两束光，同时平行激励两个 3mm 间隙砷化镓 PCSS。研究结果表明，随着触发激光脉冲宽度的减小，砷化镓 PCSS 的抖动时间减小。我们的结果克服了一个重要障碍，该障碍阻碍了砷化镓 PCSS 在高精度同步控制中的测试和理论研究。