用于碳化硅光电导半导体开关脉冲功率应用的紫外发光二极管的脉冲特性表征。

Pulsed characterization of a UV LED for pulsed power applications on a silicon carbide photoconductive semiconductor switch.

作者信息

Wilson Nicholas, Mauch Daniel, Meyers Vincent, Feathers Shannon, Dickens James, Neuber Andreas

机构信息

Center for Pulsed Power and Power Electronics, Texas Tech University, Lubbock, Texas 79409, USA.

出版信息

Rev Sci Instrum. 2017 Aug;88(8):085109. doi: 10.1063/1.4999356.

DOI:10.1063/1.4999356

PMID:28863629

Abstract

The electrical and optical characteristics of a high-power UV light emitting diode (LED) (365 nm wavelength) were evaluated under pulsed operating conditions at current amplitudes several orders of magnitude beyond the LED's manufacturer specifications. Geared towards triggering of photoconductive semiconductor switches (PCSSs) for pulsed power applications, measurements were made over varying pulse widths (25 ns-100 μs), current (0 A-250 A), and repetition rates (single shot-5 MHz). The LED forward voltage was observed to increase linearly with increasing current (∼3.5 V-53 V) and decrease with increasing pulse widths. The peak optical power observed was >30 W, and a maximum system efficiency of 23% was achieved. The evaluated LED and auxiliary hardware were successfully used as the optical trigger source for a 4H-SiC PCSS. The lowest measured on-resistance of SiC was approximately 67 kΩ.

摘要

在脉冲工作条件下，对一款高功率紫外发光二极管（LED）（波长365nm）的电学和光学特性进行了评估，其电流幅度超出了该LED制造商规格几个数量级。针对脉冲功率应用中光电导半导体开关（PCSS）的触发，在不同脉冲宽度（25ns - 100μs）、电流（0A - 250A）和重复频率（单次 - 5MHz）下进行了测量。观察到LED正向电压随电流增加（约3.5V - 53V）呈线性增加，随脉冲宽度增加而减小。观察到的峰值光功率>30W，实现的最大系统效率为23%。评估的LED和辅助硬件成功用作4H - SiC PCSS的光触发源。测得的SiC最低导通电阻约为67kΩ。