Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan.
Nanoscale Res Lett. 2013 Jul 3;8(1):308. doi: 10.1186/1556-276X-8-308.
In this work, cobalt silicide nanowires were synthesized by chemical vapor deposition processes on Si (100) substrates with anhydrous cobalt chloride (CoCl2) as precursors. Processing parameters, including the temperature of Si (100) substrates, the gas flow rate, and the pressure of reactions were varied and studied; additionally, the physical properties of the cobalt silicide nanowires were measured. It was found that single-crystal CoSi nanowires were grown at 850°C ~ 880°C and at a lower gas flow rate, while single-crystal Co2Si nanowires were grown at 880°C ~ 900°C. The crystal structure and growth direction were identified, and the growth mechanism was proposed as well. This study with field emission measurements demonstrates that CoSi nanowires are attractive choices for future applications in field emitters.
在这项工作中，通过化学气相沉积工艺在 Si（100）衬底上用无水氯化钴（CoCl2）作为前驱体合成了硅化钴纳米线。研究了不同的工艺参数，包括 Si（100）衬底的温度、气体流速和反应压力，并对钴硅化物纳米线的物理性质进行了测量。结果发现，在 850°C880°C 和较低的气体流速下生长出单晶 CoSi 纳米线，而在 880°C900°C 下生长出单晶 Co2Si 纳米线。确定了晶体结构和生长方向，并提出了生长机制。这项场发射测量研究表明，CoSi 纳米线是未来场发射应用的有吸引力的选择。
