Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur, MS, India.
J Colloid Interface Sci. 2013 Sep 15;406:225-30. doi: 10.1016/j.jcis.2013.05.037. Epub 2013 May 31.
In the present work, the Co3O4 thin films are successfully prepared via potentiodynamic electrodeposition method onto inexpensive stainless steel substrate. As-deposited films were heat treated at 623K for their conversion into Co3O4. These films were characterized by means of X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), and scanning electron microscopy (SEM) techniques. The X-ray diffraction (XRD) study revealed the formation of cobalt oxide (Co3O4) with cubic crystal structure. The FT-IR study supports the formation of Co3O4 material. The SEM image of Co3O4 film showed nanoflake-like morphology with an average thickness of 100 nm. Supercapacitive properties of Co3O4 thin film electrode were examined using cyclic voltammetry and charge-discharge techniques. The Co3O4 thin film electrode showed maximum specific capacitance of 365 Fg(-1) in 1M KOH electrolyte at the scan rate of 5 mV s(-1). The charge-discharge technique was employed to estimate the values of specific energy, power and coulombic efficiency as 64 W h kg(-1), 21.53 kW kg(-1) and 99%, respectively.
在本工作中，通过动电位电沉积方法成功地将 Co3O4 薄膜沉积在廉价的不锈钢基底上。沉积后的薄膜在 623K 下进行热处理，以将其转化为 Co3O4。这些薄膜通过 X 射线衍射（XRD）、傅里叶变换红外光谱（FT-IR）和扫描电子显微镜（SEM）技术进行了表征。X 射线衍射（XRD）研究表明形成了具有立方晶体结构的钴氧化物（Co3O4）。FT-IR 研究支持 Co3O4 材料的形成。Co3O4 薄膜电极的 SEM 图像显示出具有 100nm 平均厚度的纳米片状形态。使用循环伏安法和充放电技术研究了 Co3O4 薄膜电极的超级电容性能。在扫描速率为 5 mV s(-1)时，Co3O4 薄膜电极在 1M KOH 电解质中表现出最大的比电容为 365 Fg(-1)。采用充放电技术分别估计了比能量、比功率和库仑效率的值，分别为 64 W h kg(-1)、21.53 kW kg(-1)和 99%。
