Department of Chemistry, Capital Normal University, Beijing 100048, China.
Anal Chem. 2013 Aug 6;85(15):7574-80. doi: 10.1021/ac401680c. Epub 2013 Jul 24.
Sensors with wide dynamic ranges (DRs) are typically constructed by utilizing a set of ligands with varied affinities for the same target. We report here a novel buffer self-assembled monolayer (BSAM) strategy, to fabricate sensors with extraordinarily broad DRs using a single recognition ligand. We demonstrated the concept of BSAM by constructing the electrochemical mercuric sensors with different surface probe densities (SPD) on a gold electrode. These sensors are based on the coordination of Hg(2+) with a pair of thymine (T) formed between the two proximate poly(T) oligonucleotides on the electrode surface and Hg(2+) binding induced DNA strand displacement of ferrocene tagged poly(A). There are three types of T-Hg(2+)-T coordination: those formed between (a) two poly(T) strands where none are hybridized with poly(A) strands, thus contributing zero effect on releasing the signaling probe, (b) poly(A)/poly(T) hybridized and nonhybridized poly(T) strands, resulting in the release of a signaling probe from the surface; and (c) two poly(A)/poly(T) hybridized strands, causing the release of two signaling probes from the surface. The DRs from 10 pM to 0.1 mM at varied SPDs were observed, attributing to the tunable Hg(2+) storage capability of the poly(T) SAM formed on the surface due to the coordination mechanism of (a) and (b). The DR was able to be further extended to 1 mM by using the longer poly(T) strands. The ready-to-use sensor exhibited great selectivity against the common interferential metal ions. As demonstrated, the BSAM strategy is a facile way to fabricate sensors with tunable and wide DRs.
具有宽动态范围 (DR) 的传感器通常通过利用一组对同一目标具有不同亲和力的配体来构建。我们在这里报告了一种新的缓冲自组装单层 (BSAM) 策略,该策略使用单一识别配体来制造具有极宽 DR 的传感器。我们通过在金电极上构建具有不同表面探针密度 (SPD) 的电化学汞传感器来证明 BSAM 的概念。这些传感器基于 Hg(2+)与电极表面上两个邻近聚 (T) 寡核苷酸之间形成的胸腺嘧啶 (T) 之间的配位,以及 Hg(2+)结合诱导的带钌标记的聚 (A) 的 DNA 链置换。有三种类型的 T-Hg(2+)-T 配位:(a) 两条聚 (T) 链之间形成的配位,其中没有一条与聚 (A) 链杂交,因此对释放信号探针没有影响,(b) 杂交和未杂交的聚 (A)/聚 (T) 链之间形成的配位,导致信号探针从表面释放;和 (c) 两条聚 (A)/聚 (T) 杂交链之间形成的配位,导致从表面释放两个信号探针。在不同的 SPD 下观察到从 10 pM 到 0.1 mM 的 DR,这归因于由于 (a) 和 (b) 的配位机制,形成在表面上的聚 (T) SAM 具有可调谐的 Hg(2+)储存能力。通过使用较长的聚 (T) 链,DR 能够进一步扩展到 1 mM。准备使用的传感器对常见的干扰金属离子表现出出色的选择性。如所证明的,BSAM 策略是制造具有可调谐和宽 DR 的传感器的一种简便方法。