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通过分子电荷转移相互作用来调谐石墨烯和氮化硼量子点的电子和光学性质:理论研究。

Tuning the electronic and optical properties of graphene and boron-nitride quantum dots by molecular charge-transfer interactions: a theoretical study.

机构信息

New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur PO, Bangalore, India.

出版信息

Phys Chem Chem Phys. 2013 Sep 7;15(33):13881-7. doi: 10.1039/c3cp51510a. Epub 2013 Jul 11.

Abstract

Spin-polarized first-principles calculations have been performed to tune the electronic and optical properties of graphene (G) and boron-nitride (BN) quantum dots (QDs) through molecular charge-transfer using tetracyanoquinodimethane (TCNQ) and tetrathiafulvalene (TTF) as dopants. From our results, based on the formation energy and the distance between QDs and dopants, we infer that both the dopants are physisorbed on the QDs. Also, we find that GQDs interact strongly with the dopants compared to the BNQDs. Interestingly, although the dopants are physisorbed on QDs, their interactions lead to a decrement in the HOMO-LUMO gap of QDs by more than half of their original value. We have found a spin-polarized HOMO-LUMO gap in certain QD-dopant complexes. Mülliken population analysis, generation of density of states (DOS) and projected DOS (pDOS) plots, and optical conductivity calculations have been performed to support and understand the reasons behind our findings.

摘要

通过使用四氰基对醌二甲烷(TCNQ)和四硫富瓦烯(TTF)作为掺杂剂,进行了自旋极化的第一性原理计算,以调节石墨烯(G)和氮化硼(BN)量子点(QD)的电子和光学性质,通过分子电荷转移。根据形成能和 QD 与掺杂剂之间的距离,我们推断出两种掺杂剂都在 QD 上发生物理吸附。此外,我们发现与 BNQDs 相比,GQDs 与掺杂剂的相互作用更强。有趣的是,尽管掺杂剂在 QD 上发生物理吸附,但它们的相互作用导致 QD 的 HOMO-LUMO 能隙减小了一半以上。我们已经在某些 QD-掺杂剂复合物中发现了自旋极化的 HOMO-LUMO 能隙。进行了 Mulliken 布居分析、态密度(DOS)和投影态密度(pDOS)图的生成以及光学电导率计算,以支持和理解我们发现的背后原因。

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