Geballe Laboratory for Advanced Materials, Department of Applied Physics, Stanford University, Stanford, California 94305, USA; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA.
Adv Mater. 2013 Sep 14;25(34):4735-8. doi: 10.1002/adma.201301798. Epub 2013 Jul 15.
Mobility of electrons confined at the LaAlO₃ /SrTiO₃ interface is significantly enhanced by surface control using surface charges and adsorbates, reaching a low temperature value more than 20 000 cm(2) V(-1) s(-1) . A uniform trend that mobility increases with decreasing sheet carrier density is observed.
通过表面电荷和吸附物对界面的表面控制，显著提高了限制在 LaAlO₃/SrTiO₃ 界面处的电子的迁移率，达到了超过 20 000 cm(2) V(-1) s(-1) 的低温值。观察到迁移率随薄片载流子密度降低而增加的均匀趋势。
