Mohan Rajneesh, Krishnamoorthy Karthikeyan, Kim Gui-Sik, Kim Sang-Jae
Department of Mechatronics Engineering, Jeju National University, Jeju-si, Jeju, Korea.
J Nanosci Nanotechnol. 2013 May;13(5):3573-6. doi: 10.1166/jnn.2013.7306.
Here we report the fabrication and characteristics of graphene oxide (GO) field effect transistor gated with piezopotential of ZnO fine wires on a flexible substrate. The FET device consists of GO thin film on the bottom and ZnO piezoelectric fine wire (PFW) on the top. In the FET device the GO serves as a carrier transport channel and ZnO PFW acts as a gate. When the substrate is bent, a piezopotential is generated in the ZnO PFW. The piezopotential created by the strain in the ZnO PFW was used to control the carrier transport in the GO channel. This device demonstrates the application of piezoelectric ZnO PFW for creating the gating effect on the semiconducting performance of GO film.
在此，我们报告了在柔性衬底上，以氧化锌细线的压电势为栅极的氧化石墨烯（GO）场效应晶体管的制备及其特性。该场效应晶体管器件底部为氧化石墨烯薄膜，顶部为氧化锌压电细线（PFW）。在该场效应晶体管器件中，氧化石墨烯用作载流子传输通道，氧化锌压电细线用作栅极。当衬底弯曲时，氧化锌压电细线中会产生压电势。氧化锌压电细线中的应变所产生的压电势用于控制氧化石墨烯通道中的载流子传输。该器件展示了压电氧化锌压电细线在对氧化石墨烯薄膜的半导体性能产生栅极效应方面的应用。
