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光激发莫特-哈伯德绝缘体中的超快电荷复合。

Ultrafast charge recombination in a photoexcited Mott-Hubbard insulator.

机构信息

J. Stefan Institute, SI-1000 Ljubljana, Slovenia.

出版信息

Phys Rev Lett. 2013 Jul 5;111(1):016401. doi: 10.1103/PhysRevLett.111.016401. Epub 2013 Jul 2.

Abstract

We present a calculation of the recombination rate of the excited holon-doublon pairs based on the two-dimensional model relevant for undoped cuprates, which shows that fast processes, observed in pump-probe experiments on Mott-Hubbard insulators in the picosecond range, can be explained even quantitatively with the multimagnon emission. The precondition is the existence of the Mott-Hubbard bound exciton of the s-type. We find that its decay is exponentially dependent on the Mott-Hubbard gap and on the magnon energy, with a small prefactor, which can be traced back to strong correlations and consequently large exciton-magnon coupling.

摘要

我们提出了一种基于二维模型的激子-双电子对复合率的计算方法,该模型与未掺杂铜氧化物有关,结果表明,即使在多声子发射的情况下,也可以定量地解释在皮秒范围内的莫特-哈伯德绝缘体泵浦探测实验中观察到的快速过程。前提是存在 s 型莫特-哈伯德束缚激子。我们发现,它的衰减与莫特-哈伯德能隙和磁振子能量呈指数相关,其小的前因子可以追溯到强关联和大的激子-磁振子耦合。

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