State Key Laboratory of Advanced Technology for Material Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, People's Republic of China.
Nanotechnology. 2013 Aug 16;24(32):325202. doi: 10.1088/0957-4484/24/32/325202. Epub 2013 Jul 18.
We report a memristive switching effect in Pt/CuOx/Si/Pt devices prepared by the rf sputtering technique at room temperature. Differently from other Cu-based metal filament switching systems, a gradual electroforming process, marked by a gradual increase of the device resistance and a gradual decrease of the device capacitance, was observed in the current-voltage and capacitance characteristics. After the gradual electroforming, the devices show a uniform memristive switching behavior. By Auger electron spectroscopy analysis, a model based on the thickness change of the SiOx layer at the CuOx/Si interface and Cu ion migration is proposed for the gradual electroforming and uniform memristive switching, respectively. This work should be meaningful for the preparation of forming-free and homogeneous memristive devices.
我们报告了一种通过射频溅射技术在室温下制备的 Pt/CuOx/Si/Pt 器件中的忆阻开关效应。与其他基于 Cu 的金属丝开关系统不同，在电流-电压和电容特性中观察到一个渐进的电形成过程，其特征是器件电阻逐渐增加，器件电容逐渐减小。在逐渐电形成之后，器件表现出均匀的忆阻开关行为。通过俄歇电子能谱分析，提出了一个分别基于 CuOx/Si 界面处 SiOx 层厚度变化和 Cu 离子迁移的模型，用于解释逐渐电形成和均匀忆阻开关。这项工作对于制备无形成和均匀的忆阻器件应该具有重要意义。
