Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu, 610054, PR China.
Phys Chem Chem Phys. 2013 Sep 14;15(34):14202-9. doi: 10.1039/c3cp51518d. Epub 2013 Jul 22.
Motivated by recent investigations of semi-decorated two dimensional honeycomb structures, we demonstrated, via spin-polarized molecular-dynamics simulations and density-functional-theory calculations, that semi-sulfuretted transition-metal dichalcogenides of MX type (M = V, Nb, Ta; X = S, Se, Te) are stable and display remarkable magnetism. The unpaired d electron of the transition-metal atom arising from the breakage of the M-X bond is the mechanism behind the induction of the magnetism. The remarkable magnetism of the transition-metal atoms is caused by ferromagnetic coupling due to the competitive effects of through-bond interactions and through-space interactions. This implies the existence of an infinite ferromagnetic sheet with structural integrity and magnetic homogeneity. The estimated Curie temperatures suggest that the ferromagnetism can be achieved above room temperature in the VS, VSe, VTe, NbTe and TaTe sheets. Depending on the species of the M and X atoms, the MX sheet can be a magnetic metal, magnetic semiconductor or half-metal. Furthermore, in contrary to the recently reported semi-hydrogenated and semi-fluorinated layered materials consisting of B, C, N, etc., the MX sheets with many unpaired d electrons can offer a much stronger spin polarization and possess a more stable ferromagnetic coupling, which is critical for practical nanoscale device applications.
受最近对半填充二维蜂窝状结构研究的启发,我们通过自旋极化分子动力学模拟和密度泛函理论计算表明,MX 型半硫化过渡金属二卤化物(M = V、Nb、Ta;X = S、Se、Te)是稳定的,并表现出显著的磁性。过渡金属原子中来自 M-X 键断裂的不成对 d 电子是诱导磁性的机制。由于键间相互作用和空间相互作用的竞争效应,过渡金属原子的显著磁性是由于铁磁耦合引起的。这意味着存在具有结构完整性和磁均匀性的无限铁磁片。估计的居里温度表明,在 VS、VSe、VTe、NbTe 和 TaTe 片中可以在室温以上实现铁磁性。根据 M 和 X 原子的种类,MX 片可以是金属磁体、半导体磁体或半金属。此外,与最近报道的由 B、C、N 等组成的半氢化和半氟化层状材料不同,具有许多不成对 d 电子的 MX 片可以提供更强的自旋极化,并具有更稳定的铁磁耦合,这对于实际的纳米尺度器件应用至关重要。