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晶界周期性纳米线阵列。

Periodic nanowire array at the crystal interface.

机构信息

Department of Materials Science and Engineering, Nagoya University, Nagoya, 464-8603 Japan.

出版信息

ACS Nano. 2013 Jul 23;7(7):6297-302. doi: 10.1021/nn4023334. Epub 2013 Jul 5.

Abstract

A dislocation in a crystalline material has dangling bonds at its core and a strong strain field in its vicinity. Consequently, the dislocation attracts solute atoms and forms a so-called Cottrell atmosphere along the dislocation. A crystalline dislocation can be used as a template to produce nanowires by selectively doping foreign atoms along the dislocation. However, control of the configuration, spacing, and density of the formed periodic nanowire array has heretofore been extremely difficult. Here we show a method for fabricating ordered, electrically conductive nanowire arrays using periodic dislocations at crystal interfaces. As a demonstration, we fabricated arrays of titanium nanowires arranged at intervals of either 13 or 90 nm and then confirmed by scanning probe microscopy that they exhibit electrical conductivity inside an insulating aluminum oxide. Significantly, we were able to precisely control nanowire periodicity by the choice of crystal orientation and/or crystal planes at the crystal interface. This simple method for the fabrication of periodic nanowire arrays of highly controlled density should be widely applicable to electrical, magnetic, and optical devices.

摘要

在晶体材料中,位错的核心处存在悬空键,其附近存在很强的应变场。因此,位错会吸引溶质原子,并沿着位错形成所谓的科特雷尔气团。晶体位错可用作模板,通过沿位错选择性掺杂外来原子来制备纳米线。然而,迄今为止,对所形成的周期性纳米线阵列的结构、间距和密度的控制极其困难。在这里,我们展示了一种使用晶界周期性位错来制备有序、导电纳米线阵列的方法。作为一个演示,我们制备了间隔为 13nm 或 90nm 的钛纳米线阵列,并通过扫描探针显微镜证实,它们在绝缘氧化铝中具有导电性。重要的是,我们可以通过选择晶界处的晶体取向和/或晶面来精确控制纳米线的周期性。这种用于制备高度可控密度周期性纳米线阵列的简单方法应该广泛适用于电气、磁性和光学器件。

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