Department of Chemical Engineering, Indian Institute of Technology Kanpur, Kanpur 208016, India.
ACS Appl Mater Interfaces. 2013 Aug 14;5(15):7094-100. doi: 10.1021/am401368e. Epub 2013 Jul 24.
The ability to use chalcogenide glass thin films as photoresists for one-step maskless grayscale lithographic patterning is demonstrated. It is shown that the chalcogenide photoresists can be used to fabricate grayscale patterns with smooth and continuous profiles such as arrays of cylindrical and spherical microlenses, which are useful as optical structures for IR applications. The etching and exposure parameters are optimized to obtain smooth reproducible lens arrays of 150 μm periodicity and up to ∼170 nm height on large areas (∼1 cm(2)). The roughness is found to increase as a function of the exposure dose and is attributed to the selective dissolution of the As-Se, As-As, and Se-Se bonds present in the nanodistributed phases and the presence of the oxide phase. Thus, a minimum exposure dose produces optimally patterned lens arrays. The focal length calculated for the smooth microlens array is ∼9.3 mm, indicating the suitability of the lens arrays for focusing applications in the IR region.
展示了使用硫属化物玻璃薄膜作为光致抗蚀剂进行一步无掩模灰度光刻图形化的能力。结果表明,硫属化物光致抗蚀剂可用于制造具有平滑连续轮廓的灰度图案,例如圆柱和球形微透镜阵列,这些图案可用作 IR 应用中的光学结构。优化了刻蚀和曝光参数,以在大面积(约 1cm2)上获得具有 150μm 周期性和高达约 170nm 高度的平滑可重复透镜阵列。发现粗糙度随曝光剂量的增加而增加,这归因于纳米分布相中存在的 As-Se、As-As 和 Se-Se 键以及氧化物相的选择性溶解。因此,最小曝光剂量可产生最佳图案化的透镜阵列。计算出的平滑微透镜阵列的焦距约为 9.3mm,表明透镜阵列适用于 IR 区域的聚焦应用。