Department of Chemistry, Brookhaven National Laboratory, Upton, New York 11973-5000, United States.
Inorg Chem. 2013 Aug 19;52(16):9192-205. doi: 10.1021/ic400089s. Epub 2013 Jul 31.
Two new metal oxide semiconductors belonging to the Ag-Bi-M-O (M = Nb, Ta) chemical systems have been synthesized as candidate compounds for driving overall water splitting with visible light on the basis of cosubstitution of Ag and Bi on the A-site position of known Ca2M2O7 pyrochlores. The low-valence band edge energies of typical oxide semiconductors prevents direct water splitting in compounds with band gaps below 3.0 eV, a limitation which these compounds are designed to overcome through the incorporation of low-lying Ag 4d(10) and Bi 6s(2) states into compounds of nominal composition "AgBiM2O7". It was found that the "AgBiTa2O7" pyrochlores are in fact a solid solution with an approximate range of Ag(x)Bi(5/6)Ta2O(6.25+x/2) with 0.5 < x < 1. The structure of Ag4/5Bi5/6Ta2O6.65 was determined from the refinement of time-of-flight neutron diffraction data and was found to be a cubic pyrochlore with a = 10.52268(2) Å and a volume of 1165.143(6) Å(3). The closely related compound, AgBiNb2O7, appears to have an integer stoichiometry and to adopt an orthorhombically distorted pyrochlore-related structure with a subcell of a = 7.50102(8) Å, b = 7.44739(7) Å, c = 10.5788(1) Å, and V = 590.93(2) Å(3). Density functional theory-based calculations predict this distortion should result from A-site cation ordering. Fits to UV-vis diffuse reflectance data suggest that AgBiNb2O7 and "AgBiTa2O7" are both visible-light-absorbing semiconductors with the onset of strong direct absorption at 2.72 and 2.96 eV, respectively. Electronic structure calculations for an ordered AgBiNb2O7 structure show that the band gap reduction and the elevation of the valence band primarily result from hybridized Ag d(10)-O 2p orbitals that lie at higher energy than the normal O 2p states in typical pyrochlore oxides. While the minimum energy gap is direct in the band structure, the lowest energy dipole allowed optical transitions start about 0.2 eV higher in energy than the minimum energy transition and involve different bands. This suggests that the minimum electronic band gap in these materials is slightly smaller than the onset energy for strong absorption in the optical measurements. The elevated valence band energies of the niobate and tantalate compounds are experimentally confirmed by the ability of these compounds to reduce 2 H(+) to H2 gas when illuminated after functionalization with a Pt cocatalyst.
两种新的金属氧化物半导体属于 Ag-Bi-M-O(M = Nb,Ta)化学体系,已被合成作为候选化合物,用于在基于已知 Ca2M2O7 钙钛矿中 A 位位置的 Ag 和 Bi 共取代的基础上,用光驱动整体水分解。典型氧化物半导体的低价带边缘能量阻止了带隙低于 3.0eV 的化合物中的直接水分解,这些化合物旨在通过将低 Ag 4d(10)和 Bi 6s(2)态纳入“AgBiM2O7”的化合物来克服这一限制。结果发现,“AgBiTa2O7”钙钛矿实际上是一种具有约 Ag(x)Bi(5/6)Ta2O(6.25+x/2)的固溶体,其中 0.5 < x < 1。Ag4/5Bi5/6Ta2O6.65 的结构是通过飞行时间中子衍射数据的精修确定的,发现它是一种具有 a = 10.52268(2)Å 和 V = 1165.143(6)Å(3)的立方钙钛矿。密切相关的化合物 AgBiNb2O7 似乎具有整数化学计量比,并采用正交畸变的钙钛矿相关结构,具有 a = 7.50102(8)Å、b = 7.44739(7)Å、c = 10.5788(1)Å 和 V = 590.93(2)Å(3)的亚晶格。基于密度泛函理论的计算预测这种畸变应该是由于 A 位阳离子的有序化。对 UV-vis 漫反射数据的拟合表明,AgBiNb2O7 和“AgBiTa2O7”都是可见光吸收半导体,分别在 2.72 和 2.96eV 处出现强直接吸收的起始。有序 AgBiNb2O7 结构的电子结构计算表明,带隙减小和价带升高主要是由于 Ag d(10)-O 2p 轨道的杂化,这些轨道的能量高于典型钙钛矿氧化物中正常的 O 2p 态。虽然能带结构中的最小能隙是直接的,但最低能量的偶极允许光学跃迁的起始能量比最小能量跃迁高约 0.2eV,涉及不同的能带。这表明这些材料的最小电子能带隙略小于光学测量中强吸收的起始能量。实验证实,这些化合物的价带能量升高,因为在功能化后用 Pt 共催化剂照射时,这些化合物能够将 2H(+)还原为 H2 气体。