Computer and Automation Research Institute, Hungarian Academy of Sciences, Budapest, Hungary.
Opt Lett. 2013 Aug 1;38(15):2804-6. doi: 10.1364/OL.38.002804.
An antenna-coupled field effect transistor (FET) as a plasma wave terahertz detector is used with the current steering to record separately the gate-source and gate-drain photoresponses and their phase sensitive combination. This method is based on the observation that the plasmon-terminal coupling is cut off in saturation, resulting in only one-sided sensitivity. A polarimetric example is presented with intensity and polarization angle reconstruction using a single three-terminal antenna-coupled Si-metal-oxide semiconductor FET (MOSFET). The technique is applicable to various detection schemes and technologies (high electron mobility transistors and GaAs-, GaN-, and Si-MOSFETs), and other application possibilities are discussed.
天线耦合场效应晶体管 (FET) 作为等离子体波太赫兹探测器与电流转向一起使用，以分别记录栅源和栅漏光电响应及其相敏组合。该方法基于这样的观察结果：在饱和时，等离子体端耦合被切断，导致只有单边灵敏度。使用单个三端天线耦合 Si 金属氧化物半导体 FET (MOSFET) 呈现了一个偏振示例，实现了强度和偏振角的重建。该技术适用于各种检测方案和技术（高电子迁移率晶体管和 GaAs、GaN 和 Si-MOSFET），并讨论了其他应用可能性。
