Tsinghua National Laboratory for Information Science and Technology, State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing, China.
Opt Lett. 2013 Aug 1;38(15):2873-6. doi: 10.1364/OL.38.002873.
In this Letter, the 1.5 μm polarization entanglement generation is realized in a silicon wire waveguide utilizing its birefringence. In this scheme, two orthogonal polarized correlated states are generated by scalar processes of spontaneous four-wave mixing (SFWM) in the quasi-transverse electrical and quasi-transverse magnetic modes, respectively. Meanwhile, the vector processes of SFWM are suppressed by the group birefringence in the waveguide. The maximum polarization entangled state is generated by optimizing the pump polarization, which is demonstrated by the experiments of two-photon interference and polarization indistinguishability at one side. The fringe visibilities of two-photon interferences are 96.8±4.7% and 86.0±3.7% under two nonorthogonal polarization detection settings, respectively. This scheme provides a simple way to realize silicon integrated sources for 1.5 μm polarization entanglement generation.
在这封信件中,通过利用硅线波导的双折射效应实现了 1.5μm 偏振纠缠的产生。在该方案中,两个正交偏振的相关态分别通过在准横电和准横磁模式下的标量自发四波混频(SFWM)过程产生。同时,矢量 SFWM 过程被波导中的群双折射抑制。通过优化泵浦偏振,可产生最大的偏振纠缠态,这通过在一侧的双光子干涉和偏振不可分辨性实验得到了验证。在两种非正交偏振探测设置下,双光子干涉的条纹可见度分别为 96.8±4.7%和 86.0±3.7%。该方案为实现用于 1.5μm 偏振纠缠产生的硅集成光源提供了一种简单的方法。