Department of Experimental Physics, Saarland University, D-66123 Saarbrücken, Germany.
Phys Rev Lett. 2013 Jul 19;111(3):035502. doi: 10.1103/PhysRevLett.111.035502. Epub 2013 Jul 16.
Single asperity measurements on Si wafers with variable SiO(2) layer thickness, yet identical roughness, revealed the influence of van der Waals (vdW) interactions on friction: on thin (1 nm) SiO(2) layers, higher friction and jump-off forces were observed as compared to thick (150 nm) SiO(2) layers. The vdW interactions were additionally controlled by a set of silanized Si wafers, exhibiting the same trend. The experimental results demonstrate the influence of the subsurface material and are quantitatively described by combining calculations of interactions of the involved materials and the Derjaguin-Müller-Toporov model.
对具有不同 SiO(2) 层厚度但粗糙度相同的 Si 晶片进行单颗粒测量，揭示了范德华（vdW）相互作用对摩擦的影响：与厚（150nm）SiO(2) 层相比，在薄（1nm）SiO(2) 层上观察到更高的摩擦力和跳动力。vdW 相互作用还可以通过一组硅烷化 Si 晶片进行控制，这些晶片表现出相同的趋势。实验结果表明了亚表面材料的影响，并通过结合涉及材料的相互作用计算和德贾金-米勒-托波洛夫模型进行了定量描述。
