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氧化铜纳米片/还原氧化石墨烯杂化层状薄膜具有增强的电容性能。

CuO nanosheets/rGO hybrid lamellar films with enhanced capacitance.

机构信息

State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China.

出版信息

Nanoscale. 2013 Oct 7;5(19):9134-40. doi: 10.1039/c3nr02737f. Epub 2013 Aug 5.

DOI:10.1039/c3nr02737f
PMID:23913017
Abstract

CuO nanosheets (NSs)/reduced graphene oxide (rGO) hybrid lamellar films were prepared by vacuum filtration of CuO NSs/GO composite dispersions, followed by hydrothermal reduction. The CuO NSs/GO composite dispersions were assembled electrostatically by mixing a negatively charged GO sheets aqueous solution with a positively charged CuO NSs aqueous dispersion at room temperature. The prepared CuO NSs/rGO hybrid lamellar films exhibited a specific capacitance of 163.7 F g(-1), which is much higher than the 69.7 F g(-1) of CuO NSs and 66.0 F g(-1) of rGO. The effective specific capacitance was 82.5 F g(-1) after 1000 cycles, which was more than two times the 32.7 F g(-1) of CuO NSs electrodes. The synergistic redox activity of the CuO NSs, in combination with the high electronic conductivity of the rGO and the unique CuO NSs spaced sandwich-like porous structures, dominated the excellent capacitance of CuO NSs/rGO hybrid lamellar films. The sandwiched, lamellar, porous structures not only provide plenty of paths for electrolyte-ion access to the CuO NSs but also expose the rGO sheets to the electrolyte as much as possible. This process provides a potential way to synthesise metal oxide/GO composite electrodes for capacitors.

摘要

CuO 纳米片(NSs)/还原氧化石墨烯(rGO)杂化层状薄膜是通过真空过滤 CuO NSs/GO 复合分散体,然后进行水热还原制备的。CuO NSs/GO 复合分散体通过在室温下将带负电荷的 GO 片水溶液与带正电荷的 CuO NSs 水溶液混合而静电组装。所制备的 CuO NSs/rGO 杂化层状薄膜表现出 163.7 F g(-1) 的比电容,比 CuO NSs 的 69.7 F g(-1) 和 rGO 的 66.0 F g(-1) 都要高。经过 1000 次循环后,有效比电容为 82.5 F g(-1),是 CuO NSs 电极的 32.7 F g(-1) 的两倍多。CuO NSs 的协同氧化还原活性,结合 rGO 的高导电性和独特的 CuO NSs 间隔三明治状多孔结构,主导了 CuO NSs/rGO 杂化层状薄膜的优异电容性能。夹在中间的层状多孔结构不仅为电解质离子进入 CuO NSs 提供了大量的通道,而且尽可能地使 rGO 片暴露在电解质中。该过程为合成用于电容器的金属氧化物/GO 复合电极提供了一种潜在的方法。

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