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新型混合有机-无机旋涂光刻胶,适用于基于电子或光子的纳米光刻,具有出色的干法蚀刻抗性。

Novel hybrid organic-inorganic spin-on resist for electron- or photon-based nanolithography with outstanding resistance to dry etching.

机构信息

Industrial Engineering Department and INSTM, Via Marzolo 9, 35131, Padova, Italy.

出版信息

Adv Mater. 2013 Nov 20;25(43):6261-5. doi: 10.1002/adma.201301555. Epub 2013 Aug 5.

DOI:10.1002/adma.201301555
PMID:23913661
Abstract

A new spin-on alumina-based resist exhibits excellent performance in terms of both achievable lateral resolution and etch resistance in fluorine-based non-cryo-cooled dry etching processes. The resist has selectivity greater than 100:1 with respect to the underlying silicon during the etching process, patternability with various lithographic tools (UV, X-rays, electron beam, and nanoimprint lithography), and positive and negative tone behavior depending only on the developer chemistry.

摘要

一种新型的旋涂氧化铝基抗蚀剂在基于氟的非低温冷却干法刻蚀工艺中具有出色的横向分辨率和抗刻蚀性。该抗蚀剂在刻蚀过程中对底层硅的选择性大于 100:1,可通过各种光刻工具(UV、X 射线、电子束和纳米压印光刻)进行图形化,并且正性和负性色调行为仅取决于显影剂化学。

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