Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
Nano Lett. 2013 Sep 11;13(9):4356-61. doi: 10.1021/nl402156e. Epub 2013 Aug 8.
We report on the first demonstration of stable photoelectrochemical water splitting and hydrogen generation on a double-band photoanode in acidic solution (hydrogen bromide), which is achieved by InGaN/GaN core/shell nanowire arrays grown on Si substrate using catalyst-free molecular beam epitaxy. The nanowires are doped n-type using Si to reduce the surface depletion region and increase current conduction. Relatively high incident-photon-to-current-conversion efficiency (up to ~27%) is measured under ultraviolet and visible light irradiation. Under simulated sunlight illumination, steady evolution of molecular hydrogen is further demonstrated.
我们报告了首例在 Si 衬底上使用无催化剂分子束外延生长的 InGaN/GaN 核壳纳米线阵列的双能带光阳极在酸性溶液（氢溴酸）中稳定光电化学水分解和制氢的演示实验。通过使用 Si 对纳米线进行 n 型掺杂，以减小表面耗尽区并增加电流传导，从而实现了这一目标。在紫外光和可见光照射下，测量到相对较高的光生电流转换效率（高达约 27%）。在模拟太阳光照射下，进一步证明了分子氢的稳定演化。
