Suppr超能文献

利用半导体上的金属掩膜研究横向光丹伯效应在太赫兹辐射产生中的作用。

Investigation of the role of the lateral photo-Dember effect in the generation of terahertz radiation using a metallic mask on a semiconductor.

作者信息

Barnes M E, Berry S A, Gow P, McBryde D, Daniell G J, Beere H E, Ritchie D A, Apostolopoulos V

机构信息

School of Physics and Astronomy, University of Southampton, Southampton SO17 1BJ, United Kingdom.

出版信息

Opt Express. 2013 Jul 15;21(14):16263-72. doi: 10.1364/OE.21.016263.

Abstract

Pulses of coherent terahertz radiation can be efficiently generated by a lateral diffusion current after ultrafast generation of photo-carriers near a metal interface on the surface of a semiconductor, this is known as the lateral photo-Dember effect. We investigate how the emission depends on the pump spot position, size, power and how it is affected by the application of an applied external bias. We study the role of the metallic mask and how it suppresses emission from the carriers diffusing under it due to a reduction of available radiation states both theoretically and experimentally.

摘要

在半导体表面金属界面附近超快产生光载流子后,横向扩散电流可高效产生相干太赫兹辐射脉冲,这被称为横向光丹伯效应。我们研究了发射如何依赖于泵浦光斑位置、尺寸、功率以及它如何受到施加的外部偏置的影响。我们从理论和实验两方面研究了金属掩膜的作用以及它如何由于可用辐射态的减少而抑制在其下方扩散的载流子的发射。

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验