Xu Beibei, Hao Jianhua, Zhou Shifeng, Qiu Jianrong
Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China.
Opt Express. 2013 Jul 29;21(15):18532-7. doi: 10.1364/OE.21.018532.
Ultra-broadband infrared luminescence has been observed in bismuth (Bi)-doped germanate thin-films prepared by pulsed laser deposition. The films are compatible with various types of substrates, including conventional dielectrics (LaAlO(3), silica) and semiconductors (Si, GaAs). The emission peak position of the films can be finely tuned by changing oxygen partial pressure during the deposition, while the excitation wavelength locates from ultra-violet to near-infrared regions. The physical mechanism behind the observed infrared luminescence of the Bi-doped films, differing from that of the as-made glass, is discussed.
在通过脉冲激光沉积制备的铋（Bi）掺杂锗酸盐薄膜中观察到了超宽带红外发光。这些薄膜与各种类型的衬底兼容，包括传统电介质（LaAlO(3)、二氧化硅）和半导体（硅、砷化镓）。通过改变沉积过程中的氧分压，可以精细调节薄膜的发射峰位置，而激发波长位于紫外到近红外区域。本文讨论了铋掺杂薄膜中观察到的红外发光背后的物理机制，这与制成的玻璃不同。
