Laboratory for Molecular Engineering of Optoelectronic Nanomaterials, Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne, Station 6, CH-1015 Lausanne, Switzerland.
ACS Appl Mater Interfaces. 2013 Aug 28;5(16):8018-24. doi: 10.1021/am402096r. Epub 2013 Aug 14.
Cu2ZnSnS4 (CZTS) is a promising p-type semiconductor that has not yet been extensively investigated for solar fuel production via water splitting. Here, we optimize and compare two different electrodeposition routes (simultaneous and sequential) for preparing CZTS electrodes. More consistent results are observed with the simultaneous route. In addition, the effect of etching and the presence of a CdS buffer layer on the photocurrent are investigated. Finally, we demonstrate for the first time the stabilization of these electrodes using protecting overlayers deposited by atomic layer deposition (ALD). Our best performing protected electrodes (Mo/CZTS/CdS/AZO/TiO2/Pt) exhibited a photocurrent of over 1 mA cm(-2) under standard one sun illumination conditions and a significant improvement in stability over unprotected electrodes.
铜锌锡硫（CZTS）是一种很有前途的 p 型半导体，但尚未被广泛研究用于通过水分解来生产太阳能燃料。在这里，我们优化并比较了两种不同的电沉积路线（同时和顺序）来制备 CZTS 电极。同时路线得到了更一致的结果。此外，还研究了刻蚀和 CdS 缓冲层对光电流的影响。最后，我们首次通过原子层沉积（ALD）沉积保护层来证明这些电极的稳定性。我们表现最好的保护电极（Mo/CZTS/CdS/AZO/TiO2/Pt）在标准的单阳光照条件下表现出超过 1 mA cm(-2)的光电流，并且在稳定性方面比未保护的电极有显著提高。
