Chongqing Key Laboratory of Micro/Nano Materials Engineering and Technology, Chongqing University of Arts and Science , Chongqing 402160, PR China.
ACS Appl Mater Interfaces. 2013 Sep 11;5(17):8414-22. doi: 10.1021/am401701y. Epub 2013 Aug 27.
Doped-graphene has attracted considerable attention in many fields because doping element can alter the electrical properties of graphene. In this paper, we synthesized ZnSe·xN2H4/graphene (ZnSe·xN2H4/GS) and ZnSe/nitrogen-doped graphene (ZnSe/N-GS) nanocomposites with p-n junctions via one-pot solvothermal process. The structure, morphologies and catalytic performance of the ZnSe·xN2H4/GS and ZnSe/N-GS are characterized by X-ray diffraction pattern (XRD), field emission scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy (RS), X-ray photoelectron spectroscopy (XPS), and cathodoluminescence spectrum (CL), respectively. Our experiments show that the as-prepared nanocomposites ZnSe·xN2H4/GS and ZnSe/N-GS exhibit remarkably enhanced photocatalytic activities for methylene blue (MB) dye under visible light irradiation. Even importantly, ZnSe/N-GS would make this degradation process more effective. Overall, this facile and catalyst-free synthesize method in this work could provide new insights into the fabrication of other composites based on doped graphene with high performance photocatalysts, which show their potential applications in producing of hydrogen through water splitting, environmental protection issues.
掺杂石墨烯在许多领域引起了相当大的关注，因为掺杂元素可以改变石墨烯的电学性质。在本文中，我们通过一锅溶剂热法合成了具有 p-n 结的 ZnSe·xN2H4/石墨烯（ZnSe·xN2H4/GS）和 ZnSe/氮掺杂石墨烯（ZnSe/N-GS）纳米复合材料。通过 X 射线衍射图谱（XRD）、场发射扫描电子显微镜（SEM）、透射电子显微镜（TEM）、拉曼光谱（RS）、X 射线光电子能谱（XPS）和阴极发光光谱（CL）分别对 ZnSe·xN2H4/GS 和 ZnSe/N-GS 的结构、形貌和催化性能进行了表征。我们的实验表明，所制备的纳米复合材料 ZnSe·xN2H4/GS 和 ZnSe/N-GS 在可见光照射下对亚甲基蓝（MB）染料具有显著增强的光催化活性。更重要的是，ZnSe/N-GS 会使这个降解过程更加有效。总的来说，这项工作中简单且无催化剂的合成方法为制备具有高性能光催化剂的掺杂石墨烯基复合材料提供了新的思路，这表明它们在通过水分解产生氢气、环境保护问题等方面具有潜在的应用前景。
