Advanced Manufacturing Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki, Japan.
Chem Soc Rev. 2014 Apr 7;43(7):2027-41. doi: 10.1039/c3cs60222b. Epub 2013 Aug 20.
The fabrication of thin oxide films at low temperatures using simple processes has been a significant challenge associated with expanding the potential applications of these materials. Recent developments have demonstrated that the photo-assisted chemical solution deposition (PACSD) process offers a promising means of solving these difficulties, allowing high volume, on-demand production of variable sample sizes using an advantageous wet process. A better understanding of the crystal growth phenomena associated with this process, however, is required to enable various oxide thin films to be prepared using this new concept. Under pulsed ultraviolet (UV) laser irradiation, crystal growth has been confirmed to proceed by near-instantaneous photothermal heating and photochemical effects at the reaction interface. Vacuum UV lamp irradiation is also a useful means of generating oxide nuclei, since it results in effective chemical bond cleavage and simultaneously produces reactive oxidant (O3/O((1)D)) species. In this review, the nucleation and growth mechanisms which occur during the PACSD process are introduced and discussed and we examine the future possible applications of this process.
使用简单工艺在低温下制造薄氧化物薄膜一直是扩大这些材料潜在应用的重大挑战。最近的发展表明,光辅助化学溶液沉积(PACSD)工艺提供了一种有前途的解决这些困难的方法,允许使用有利的湿法工艺大规模、按需生产各种不同尺寸的样品。然而,为了利用这一新概念来制备各种氧化物薄膜,需要更好地了解与该工艺相关的晶体生长现象。在脉冲紫外(UV)激光辐照下,已经证实晶体生长是通过反应界面的近瞬时光热加热和光化学效应进行的。真空 UV 灯辐照也是产生氧化物核的有用手段,因为它会导致有效化学键的断裂,并同时产生反应性氧化剂(O3/O((1)D))物种。在这篇综述中,我们介绍并讨论了 PACSD 工艺过程中发生的成核和生长机制,并研究了该工艺的未来可能应用。