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人工心脏瓣膜:通过PECVD a-SiC:H涂层改善血液相容性。

Artificial heart valves: improved blood compatibility by PECVD a-SiC:H coating.

作者信息

Bolz A, Schaldach M

机构信息

Zentralinstitut für Biomedizinische Technik, Universitat Erlangen, F.R.G.

出版信息

Artif Organs. 1990 Aug;14(4):260-9. doi: 10.1111/j.1525-1594.1990.tb02967.x.

DOI:10.1111/j.1525-1594.1990.tb02967.x
PMID:2396923
Abstract

Implants are steadily increasing in importance as substitutions for body functions. With the present state of the art, the limitations of the application of cardiovascular implants are due to insufficient performance of biomaterials. Present research in this field is being concentrated on efforts to improve the thrombus resistance of conventional materials by coating with semiconducting materials to actively influence the electrochemical interaction between the condensed matter and blood proteins. Based on an electrochemical model of the interaction of fibrinogen with an artificial surface and the resulting requirements for improving hemocompatibility, a coating of amorphous hydrogenated silicon carbide deposited by plasma-enhanced chemical vapor deposition (PECVD) is presently under evaluation as a special coating material for cardiovascular prostheses and is herein described. In particular, first results are published concerning the optimum deposition parameters in the PECVD process and cell culture tests. Experimental results of comparative partial thromboplastin time studies serve the purpose of proving the validity of the electrochemical reaction model referring the hemocompatibility of implantable materials to their semiconducting surface properties. The aim of this article is to demonstrate a feasible method for an antithrombogenic surface modification based on doped amorphous silicon carbide films that is in full conformance to the above mentioned model.

摘要

作为人体功能的替代物,植入物的重要性正在稳步增加。就目前的技术水平而言,心血管植入物应用的局限性在于生物材料性能不足。该领域目前的研究集中在通过用半导体材料涂层来提高传统材料的抗血栓性,以积极影响凝聚物质与血液蛋白质之间的电化学相互作用。基于纤维蛋白原与人工表面相互作用的电化学模型以及由此产生的改善血液相容性的要求,目前正在评估通过等离子体增强化学气相沉积(PECVD)沉积的非晶氢化碳化硅涂层作为心血管假体的特殊涂层材料,并在此进行描述。特别是,首次公布了有关PECVD工艺中最佳沉积参数和细胞培养测试的结果。比较部分凝血活酶时间研究的实验结果用于证明将可植入材料的血液相容性与其半导体表面性质相关联的电化学反应模型的有效性。本文的目的是展示一种基于掺杂非晶硅碳化膜的抗血栓表面改性的可行方法,该方法完全符合上述模型。

相似文献

1
Artificial heart valves: improved blood compatibility by PECVD a-SiC:H coating.人工心脏瓣膜:通过PECVD a-SiC:H涂层改善血液相容性。
Artif Organs. 1990 Aug;14(4):260-9. doi: 10.1111/j.1525-1594.1990.tb02967.x.
2
[The electrochemical corrosion behavior of antithrombogenic coatings of amorphous silicon carbide].[非晶态碳化硅抗血栓涂层的电化学腐蚀行为]
Biomed Tech (Berl). 1990;35 Suppl 3:21-4.
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[Physical mechanisms of solid-protein interactions in the interface between amorphous silicon carbide and fibrinogen].[非晶态碳化硅与纤维蛋白原界面处固体-蛋白质相互作用的物理机制]
Biomed Tech (Berl). 1992 Nov;37(11):244-53. doi: 10.1515/bmte.1992.37.11.244.
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[Corrosion behavior of antithrombogenic coating of silicon carbide].
Biomed Tech (Berl). 1990;35 Suppl 2:227-9.
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[In vitro studies of the blood compatibility of amorphous silicon carbide].[非晶态碳化硅血液相容性的体外研究]
Biomed Tech (Berl). 1990;35 Suppl 3:25-7.
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Haemocompatibility optimisation of implants by hybrid structuring.通过混合结构优化植入物的血液相容性
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SiC protective coating for photovoltaic retinal prosthesis.用于光伏视网膜假体的碳化硅保护涂层。
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[Cardiovascular device coatings of silicon carbide as a new material for artificial heart valves].[作为人工心脏瓣膜新材料的碳化硅心血管装置涂层]
Biomed Tech (Berl). 1989;34 Suppl:93-4. doi: 10.1515/bmte.1989.34.s1.93.
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Plasma-enhanced chemical vapor deposited silicon carbide as an implantable dielectric coating.等离子体增强化学气相沉积碳化硅作为一种可植入的介电涂层。
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