IBM Almaden Research Center , San Jose, California, United States.
Nano Lett. 2013 Oct 9;13(10):4675-8. doi: 10.1021/nl402088f. Epub 2013 Sep 11.
Ionic liquid gating of three terminal field effect transistor devices with channels formed from SrTiO3(001) single crystals induces a metallic state in the channel. We show that the metallization is strongly affected by the presence of oxygen gas introduced external to the device whereas argon and nitrogen have no effect. The suppression of the gating effect is consistent with electric field induced migration of oxygen that we model by oxygen-induced carrier annihilation.
离子液体门控三端场效应晶体管器件，其通道由 SrTiO3(001) 单晶体形成，会在通道中诱导出金属态。我们表明，这种金属化状态强烈受到器件外部引入的氧气存在的影响，而氩气和氮气则没有影响。门控效应的抑制与我们通过氧诱导载流子湮灭模型所模拟的电场诱导氧迁移一致。
