Science and Technology on Micro-system Laboratory and State Key Laboratories of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China.
Philos Trans A Math Phys Eng Sci. 2013 Sep 2;371(2000):20120315. doi: 10.1098/rsta.2012.0315. Print 2013 Oct 13.
In this paper, our investigation of nanofabrication, effects and sensors based on the traditional micro-electro-mechanical systems (MEMS) technology has been reviewed. Thanks to high selectivity in anisotropic etching and sacrificial layer processes, nanostructures such as nanobeams and nanowires have been fabricated in top-down batch process, in which beams with thickness of only 20 nm and nanowires whose width and thickness is only 20 nm were achieved. With the help of MEMS chip, the scale effect of Young's modulus in silicon has been studied and confirmed directly in a tensile experiment using electron microscopy. Because of their high surface-to-volume ratio and small size, silicon nanowire (SiNW)-based field-effect transistors (FETs) have been shown as one of the most promising electronic devices and ultrasensitive detectors in biological applications. We demonstrated that an SiNW-FET sensor can reveal ultrahigh sensitivity for rapid and reliable detection of 0.1 fM of target DNA with high specificity. All these indicate that the MEMS technology can pave the way to nanoapplications with its advantages of batch production, low cost and high performance.
本文综述了基于传统微机电系统（MEMS）技术的纳米制造、效应和传感器的研究。得益于各向异性刻蚀和牺牲层工艺的高选择性，已经可以采用自上而下的批量工艺来制造纳米结构，例如纳米梁和纳米线，其厚度仅为 20nm，宽度和厚度仅为 20nm 的纳米线也已实现。借助 MEMS 芯片，已经在电子显微镜的拉伸实验中直接研究并证实了硅中杨氏模量的尺度效应。由于具有高的比表面积和小尺寸，基于硅纳米线（SiNW）的场效应晶体管（FET）已被证明是生物应用中最有前途的电子器件和超高灵敏度探测器之一。我们证明了 SiNW-FET 传感器能够实现超高灵敏度，可快速可靠地检测 0.1 fM 的目标 DNA，具有高特异性。所有这些都表明，MEMS 技术具有批量生产、低成本和高性能的优势，可以为纳米应用铺平道路。
