Department of Applied Chemistry, MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Science, Xi'an Jiaotong University , Xi'an 710049, P. R. China.
ACS Appl Mater Interfaces. 2013 Oct 9;5(19):9411-20. doi: 10.1021/am401784p. Epub 2013 Sep 25.
Blending high-permittivity (εr) ceramic powders or conductive fillers into polymers to form 0-3-type composites has been regarded as one of the most promising processes to achieve high-dielectric-permittivity materials with excellent processing performance. The high dielectric loss and conductivity induced by the interface between the matrix and fillers as well as the leakage current have long been a great challenge of dielectric composites, and the resolution of these challenges is still an open question. In this work, poly(vinylidenefluoride-trifluorethylene with double bonds)/graphene nanosheets (P(VDF-TrFE-DB)/GNS) terpolymer nanocomposites were fabricated via a solution-cast process. GNSs were functionalized with KH550 to improve the dispersion in the terpolymer matrix solution and crosslinked with P(VDF-TrFE-DB) by a free-radical addition reaction in the nanocomposites. Compared with neat terpolymer, significantly increased dielectric permittivity and a low loss were observed for the composites. For instance, at 1 kHz the P(VDF-TrFE-DB)/GNS composites with 4 vol % GNS possessed a dielectric permittivity of 74, which is over seven times larger than that of neat terpolymer. However, a rather low dielectric loss (0.08 at 1 kHz) and conductivity (3.47 × 10(-7) S/m at 1 kHz) are observed in the P(VDF-TrFE-DB)/GNS composites containing up to 12 vol % GNS. The covalent bonding constructed between P(VDF-TrFE-DB) and GNS is responsible for the reduced aspect ratio of the GNS and the crystalline properties of P(VDF-TrFE-DB) as well as the improved compatibility between them. As a result, the high-dielectric-loss conductivity of polymer composites, mainly induced by conduction loss and the interface polarization between the matrix and filler, were effectively restricted. Meanwhile, the 3D network established between P(VDF-TrFE-DB) and GNS endows the P(VDF-TrFE-DB)/GNS composites at high temperature with excellent mechanical and dielectric properties. Besides preparing high-performance dielectric composites, this facile route may also be utilized to fabricate high-performance nanocomposites by inhibiting the poor compatibility between fillers and polymeric matrix.
将高介电常数 (εr) 陶瓷粉末或导电填料混入聚合物中形成 0-3 型复合材料,一直被认为是获得具有优异加工性能的高介电常数材料的最有前途的方法之一。基体与填料之间的界面以及漏电流引起的高介电损耗和电导率一直是介电复合材料的巨大挑战,而这些挑战的解决仍然是一个悬而未决的问题。在这项工作中,通过溶液浇铸工艺制备了聚(偏二氟乙烯-三氟乙烯双键)/石墨烯纳米片(P(VDF-TrFE-DB)/GNS)三元共聚物纳米复合材料。通过 KH550 对 GNS 进行功能化处理,以改善其在三元共聚物基体溶液中的分散性,并通过自由基加成反应在纳米复合材料中与 P(VDF-TrFE-DB)交联。与纯三元共聚物相比,复合材料的介电常数显著提高,损耗较低。例如,在 1 kHz 时,具有 4 体积% GNS 的 P(VDF-TrFE-DB)/GNS 复合材料的介电常数为 74,是纯三元共聚物的 7 倍以上。然而,在含有高达 12 体积% GNS 的 P(VDF-TrFE-DB)/GNS 复合材料中观察到相当低的介电损耗(1 kHz 时为 0.08)和电导率(1 kHz 时为 3.47×10(-7)S/m)。P(VDF-TrFE-DB)与 GNS 之间构建的共价键负责减小 GNS 的纵横比和 P(VDF-TrFE-DB)的结晶性能以及它们之间的相容性。因此,有效地限制了聚合物复合材料的高介电损耗电导率,主要由传导损耗和基体与填料之间的界面极化引起。同时,P(VDF-TrFE-DB)与 GNS 之间建立的 3D 网络使 P(VDF-TrFE-DB)/GNS 复合材料在高温下具有优异的机械和介电性能。除了制备高性能介电复合材料外,该简便的方法还可用于通过抑制填料与聚合物基体之间的不良相容性来制备高性能纳米复合材料。