Sandia National Laboratories, Albuquerque, NM 87185, USA.
Dalton Trans. 2013 Nov 21;42(43):15288-95. doi: 10.1039/c3dt51903a.
The structures and properties of layered technetium dichalcogenides TcX2 (X = S, Se, Te) have been investigated using density functional theory. The equilibrium structures of TcSe2 and TcTe2, adopting distorted Cd(OH)2-type unit cells similar to TcS2, are reported for the first time at the atomic level, along with their electronic properties. In contrast to previous X-ray diffraction analyses, calculations reveal that stoichiometric TcTe2 is not isomorphous to the high-temperature monoclinic phase β-MoTe2. All three compounds are found to be semiconductors with calculated band gaps of 0.9 eV for TcS2, 0.8 eV for TcSe2, and 0.3 eV for TcTe2. The thermal properties of these TcX2 compounds have also been predicted using phonon frequencies calculated with density functional perturbation theory.
采用密度泛函理论研究了层状锝二卤化物 TcX2(X = S、Se、Te)的结构和性质。首次在原子水平上报道了采用扭曲的 Cd(OH)2 型单元晶格类似于 TcS2 的 TcSe2 和 TcTe2 的平衡结构及其电子性质。与之前的 X 射线衍射分析不同,计算表明化学计量比的 TcTe2 与高温单斜相 β-MoTe2 不是同构的。所有三种化合物都被发现是半导体,计算得到的带隙分别为 TcS2 的 0.9eV、TcSe2 的 0.8eV 和 TcTe2 的 0.3eV。还使用密度泛函微扰理论计算的声子频率预测了这些 TcX2 化合物的热性质。