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堆叠式声匹配层的微加工用于 15MHz 超声换能器。

Microfabrication of stacks of acoustic matching layers for 15 MHz ultrasonic transducers.

机构信息

Department of Micro and Nano Systems Technology, Vestfold University College, Horten, Norway.

出版信息

Ultrasonics. 2014 Feb;54(2):614-20. doi: 10.1016/j.ultras.2013.08.015. Epub 2013 Aug 30.

Abstract

This paper presents a novel method used to manufacture stacks of multiple matching layers for 15 MHz piezoelectric ultrasonic transducers, using fabrication technology derived from the MEMS industry. The acoustic matching layers were made on a silicon wafer substrate using micromachining techniques, i.e., lithography and etch, to design silicon and polymer layers with the desired acoustic properties. Two matching layer configurations were tested: a double layer structure consisting of a silicon-polymer composite and polymer and a triple layer structure consisting of silicon, composite, and polymer. The composite is a biphase material of silicon and polymer in 2-2 connectivity. The matching layers were manufactured by anisotropic wet etch of a (110)-oriented Silicon-on-Insulator wafer. The wafer was etched by KOH 40 wt%, to form 83 μm deep and 4.5mm long trenches that were subsequently filled with Spurr's epoxy, which has acoustic impedance 2.4 MRayl. This resulted in a stack of three layers: The silicon substrate, a silicon-polymer composite intermediate layer, and a polymer layer on the top. The stacks were bonded to PZT disks to form acoustic transducers and the acoustic performance of the fabricated transducers was tested in a pulse-echo setup, where center frequency, -6 dB relative bandwidth and insertion loss were measured. The transducer with two matching layers was measured to have a relative bandwidth of 70%, two-way insertion loss 18.4 dB and pulse length 196 ns. The transducers with three matching layers had fractional bandwidths from 90% to 93%, two-way insertion loss ranging from 18.3 to 25.4 dB, and pulse lengths 326 and 446 ns. The long pulse lengths of the transducers with three matching layers were attributed to ripple in the passband.

摘要

本文提出了一种新颖的方法,用于使用源自 MEMS 行业的制造技术为 15 MHz 压电超声换能器制造多层匹配层。声学匹配层是在硅片衬底上使用微机械加工技术(即光刻和刻蚀)制造的,以设计具有所需声学特性的硅和聚合物层。测试了两种匹配层结构:由硅-聚合物复合材料和聚合物组成的双层结构和由硅、复合材料和聚合物组成的三层结构。复合材料是硅和聚合物的两相材料,连接方式为 2-2。通过各向异性湿刻蚀(110)取向的绝缘体上硅晶片来制造匹配层。使用 KOH 40wt% 对晶片进行刻蚀,形成 83μm 深、4.5mm 长的沟槽,随后用 Spurr's 环氧树脂填充,其声阻抗为 2.4MRayl。这导致了三层堆叠:硅衬底、硅-聚合物复合材料中间层和顶部的聚合物层。将这些堆叠层键合到 PZT 圆盘上,形成声学换能器,并在脉冲回波设置中测试了所制造的换能器的声学性能,其中测量了中心频率、-6dB 相对带宽和插入损耗。具有两个匹配层的换能器的相对带宽为 70%,双向插入损耗为 18.4dB,脉冲长度为 196ns。具有三个匹配层的换能器的相对带宽从 90%到 93%不等,双向插入损耗从 18.3dB 到 25.4dB 不等,脉冲长度为 326ns 和 446ns。具有三个匹配层的换能器的长脉冲长度归因于通带中的纹波。

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