Department of Mechanical Engineering, KAIST, Daejeon 305-701, Korea.
Nanotechnology. 2013 Oct 18;24(41):415704. doi: 10.1088/0957-4484/24/41/415704. Epub 2013 Sep 17.
We employed very long nanowires mixed into nanoparticle thin films to improve their weak crack resistance for flexible electronics. We also measured the dependence of the failure strain and resistivity of the Ag nanowire-reinforced Ag nanoparticle thin films on the wt% and sintering condition of nanowires by means of resistance measurements under tension in an in situ tensile tester. Very long nanowires of over 90 μm suppressed thin film cracking by bridging cracks in both the transverse and longitudinal directions and also reduced the electrical resistivity under tension. Moreover, diffusion and growth of nanowires induced by the thermal annealing process was observed, resulting in a highly increased failure strain. Due to the use of the same materials, effective diffusion was facilitated, thus inducing strong bonds between nanoparticles and nanowires.
我们采用非常长的纳米线混合到纳米颗粒薄膜中，以提高其在柔性电子产品中的弱抗裂性。我们还通过原位拉伸试验机中的张力下电阻测量，测量了 Ag 纳米线增强 Ag 纳米颗粒薄膜的失效应变量和电阻率对纳米线的 wt%和烧结条件的依赖性。超过 90 μm 的非常长的纳米线通过在横向和纵向两个方向上桥接裂缝来抑制薄膜的开裂，同时也降低了拉伸时的电阻率。此外，观察到热退火过程中纳米线的扩散和生长，导致失效应变的大幅增加。由于使用了相同的材料，促进了有效的扩散，从而在纳米颗粒和纳米线之间产生了强结合。
