Chen Xinlong, Hao Guanghui, Chang Benkang, Zhang Yijun, Zhao Jing, Xu Yuan, Jin Muchun
Appl Opt. 2013 Sep 1;52(25):6272-7. doi: 10.1364/AO.52.006272.
The stability of negative electron affinity Ga0.37Al0.63As photocathodes in an ultrahigh vacuum system has been investigated. The degraded photocurrents of the Cs/O activated Ga0.37Al0.63As photocathodes under illumination with different intensity are recorded in real time, and the quantum efficiencies are measured after the degradation. The degraded quantum efficiencies of the photocathode under no illumination are measured at regular intervals. Multiple activations are performed on the Ga0.37Al0.63As photocathode, after that the quantum efficiencies and the degraded photocurrents are measured. The results indicate that the lifetime of the Ga0.37Al0.63As photocathode increases as the intensity of illumination decreases, and is longer than that of the GaAs photocathode in the case of no illumination. Besides, the Ga0.37Al0.63As photocathode performed after the second activation would obtain optimal stability.
研究了负电子亲和势Ga0.37Al0.63As光电阴极在超高真空系统中的稳定性。实时记录了Cs/O激活的Ga0.37Al0.63As光电阴极在不同强度光照下的光电流退化情况，并在退化后测量了量子效率。定期测量无光照时光电阴极的退化量子效率。对Ga0.37Al0.63As光电阴极进行多次激活后，测量量子效率和退化光电流。结果表明，Ga0.37Al0.63As光电阴极的寿命随光照强度的降低而增加，且在无光照情况下比GaAs光电阴极的寿命更长。此外，第二次激活后制备的Ga0.37Al0.63As光电阴极将获得最佳稳定性。
