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半导体超晶格中的激光控制激子 Fano 共振。

Laser-controlled exciton Fano resonance in semiconductor superlattices.

机构信息

Division of Materials Science, Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan. Center for Computational Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8577, Japan.

出版信息

J Phys Condens Matter. 2013 Oct 30;25(43):435801. doi: 10.1088/0953-8984/25/43/435801. Epub 2013 Oct 4.

DOI:10.1088/0953-8984/25/43/435801
PMID:24097286
Abstract

Quantum control of excitonic Floquet states in semiconductor superlattices driven by an intense monochromatic laser is examined from a theoretical point of view. High-resolution optical absorption spectra, calculated using multichannel scattering theory with the R-matrix propagation method, clarified that the excitonic Fano resonance structure is induced by the laser field. Each of the physical quantities related to this resonance-such as the spectral intensity, an asymmetry parameter (q-parameter), a resonance width, and so on-shows a characteristic extremum as a function of laser strength (F(ac)) in the vicinity of a critical value of F(ac) where dynamic localization is realized. It has also been shown that this F(ac)-dependence is caused by an ac-Zener coupling between two photon sidebands. Further, we have shown that these quantities are also controlled by changing the laser frequency (ω), as well as F(ac), and the underlying physics is explained on the basis of anticrossing behavior of the two photon sidebands.

摘要

从理论角度研究了在强单色激光驱动下半导体超晶格中激子 Floquet 态的量子控制。使用 R 矩阵传播方法的多通道散射理论计算的高分辨率光吸收谱表明,激光场诱导了激子 Fano 共振结构。与该共振相关的每个物理量,例如光谱强度、不对称参数(q 参数)、共振宽度等,在激光强度(F(ac))接近实现动态局域化的临界值时,作为函数显示出特征极值。还表明,这种 F(ac)依赖性是由两个光子边带之间的 ac-Zener 耦合引起的。此外,我们还表明,这些量也可以通过改变激光频率(ω)以及 F(ac)来控制,并且基于两个光子边带的交叉行为来解释其物理原理。

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