Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia.
Nanotechnology. 2013 Nov 22;24(46):465602. doi: 10.1088/0957-4484/24/46/465602. Epub 2013 Oct 24.
We demonstrate the growth of InP nanowires on Si(111) using a thin InP buffer layer. The buffer layer is grown using a two-step procedure. The initial layer formation is ensured by using a very low growth temperature. An extremely high V/III ratio is necessary to prevent In droplet formation at this low temperature. The second layer is grown on the initial layer at a higher temperature and we find that post-growth annealing of the buffer layer does not improve its crystal quality significantly. It is found that the layers inherently have the (111)B polarity. Nanowires grown on this buffer layer have the same morphology and optical properties as nanowires grown on InP (111)B substrates. The vertical yield of the nanowires grown on the buffer layer is over 97% and we also find that crystal defects in the buffer layer do not affect the morphology, vertical yield or optical properties of the nanowires significantly.
我们使用 InP 缓冲层在 Si(111)上展示了 InP 纳米线的生长。该缓冲层使用两步工艺生长。通过使用非常低的生长温度确保初始层的形成。在如此低的温度下，需要极高的 V/III 比来防止 In 液滴的形成。第二层在初始层上在较高的温度下生长，我们发现缓冲层的后生长退火并不能显著提高其晶体质量。发现这些层固有地具有（111）B 极性。在该缓冲层上生长的纳米线具有与在 InP（111）B 衬底上生长的纳米线相同的形态和光学性质。在缓冲层上生长的纳米线的垂直产率超过 97%，我们还发现缓冲层中的晶体缺陷不会显著影响纳米线的形态、垂直产率或光学性质。
