Lee Jae-Hyun, Jang Yamujin, Heo Keun, Lee Jeong-Mi, Choi Soon Hyung, Joo Won-Jae, Hwang Sung Woo, Whang Dongmok
Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) and School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
J Nanosci Nanotechnol. 2013 Nov;13(11):7401-5. doi: 10.1166/jnn.2013.7876.
A large-scale nanoporous graphene (NPG) fabrication method via a thin anodic aluminum oxide (AAO) etching mask is presented in this paper. A thin AAO film is successfully transferred onto a hydrophobic graphene surface under no external force. The AAO film is completely stacked on the graphene due to the van der Waals force. The neck width of the NPG can be controlled ranging from 10 nm to 30 nm with different AAO pore widening times. Extension of the NPG structure is demonstrated on a centimeter scale up to 2 cm2. AAO and NPG structures are characterized using optical microscopy (OM), Raman spectroscopy and field-emission scanning electron microscopy (FE-SEM). A field effect transistor (FET) is realized by using NPG. Its electrical characteristics turn out to be different from that of pristine graphene, which is due to the periodic nanostructures. The proposed fabrication method could be adapted to a future graphene-based nano device.
本文介绍了一种通过薄阳极氧化铝（AAO）蚀刻掩膜制备大规模纳米多孔石墨烯（NPG）的方法。在无外力作用下，成功将薄AAO膜转移到疏水石墨烯表面。由于范德华力，AAO膜完全堆叠在石墨烯上。通过不同的AAO孔径扩大时间，可将NPG的颈部宽度控制在10纳米至30纳米范围内。NPG结构在厘米尺度上扩展至2平方厘米得到了证明。使用光学显微镜（OM）、拉曼光谱和场发射扫描电子显微镜（FE-SEM）对AAO和NPG结构进行了表征。利用NPG实现了场效应晶体管（FET）。其电学特性与原始石墨烯不同，这是由于周期性纳米结构所致。所提出的制备方法可应用于未来基于石墨烯的纳米器件。
