Lee Dea Uk, Yun Dong Yeol, No Young Soo, Hwang Jun Ho, Lee Chang Hun, Kim Tae Whan
Department of Electronics and Computer Engineering, Hanyang University, Seoul 133-791, Korea.
J Nanosci Nanotechnol. 2013 Nov;13(11):7596-9. doi: 10.1166/jnn.2013.7883.
SnO2 nanostuctures were formed on indium-tin-oxide (ITO)-coated glass substrates by using an electrochemical deposition (ECD) method. X-ray photoelectron spectroscopy (XPS) spectra showed the existence of elemental Sn and O in the samples, indicative of the formation of SnO2 materials. An XPS spectrum showing the O 1s peak at a binding energy of 531.5 eV indicated that the oxygen atoms were bonded to the SnO2. Field-emission scanning electron microscopy (FE-SEM) images showed that the samples formed by using the ECD method had SnO2 nanostructures with a size between 280 and 350 nm. FE-SEM images showed that the size of the SnO2 nanostructures formed at 65 degrees C for 30 min increased with decreasing applied voltage. X-ray diffraction (XRD) patterns showed that the SnO2 nanostrucures had tetragonal structures with cell parameters of a = 4.738 A and c = 3.187 A. XRD results showed that the peak intensity of the (110) plane increased with decreasing applied voltage, indicative of a preferencial orientation of the (110) plane.
通过电化学沉积（ECD）方法在涂有铟锡氧化物（ITO）的玻璃基板上形成了SnO₂纳米结构。X射线光电子能谱（XPS）光谱显示样品中存在元素Sn和O，表明形成了SnO₂材料。显示结合能为531.5 eV处的O 1s峰的XPS光谱表明氧原子与SnO₂键合。场发射扫描电子显微镜（FE-SEM）图像显示，采用ECD方法形成的样品具有尺寸在280至350 nm之间的SnO₂纳米结构。FE-SEM图像显示，在65℃下反应30分钟形成的SnO₂纳米结构的尺寸随着施加电压的降低而增大。X射线衍射（XRD）图谱显示，SnO₂纳米结构具有四方结构，晶胞参数a = 4.738 Å，c = 3.187 Å。XRD结果表明，（110）面的峰强度随着施加电压的降低而增加，表明（110）面存在择优取向。
