Lee Ji-Eun, Kim Donghwan, Yoon Kyung Hoon, Cho Jun-Sik
Solar Energy Department, Korea Institute of Energy Research, 152 Gajeong-ro, Yuseong-gu, Daejeon 305-343, Korea.
J Nanosci Nanotechnol. 2013 Dec;13(12):7891-4. doi: 10.1166/jnn.2013.8149.
Flexible hydrogenated nanocrystalline (nc-Si:H) thin-film solar cells were prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD), and the effect of highly crystalline intrinsic Si seed layers at the initial growth stage of i nc-Si:H absorbers on their structural and electrical properties and on the performance of solar cells was investigated. The crystallization of i nc-Si:H absorbers was significantly enforced by the introduction of highly crystalline seed layers, resulting in the reduction of defect-dense a-Si:H grain boundary and incubation layer thickness. The open circuit voltage of the nc-Si:H solar cells with the seed layers was improved by the decrease of charged defect density in the defect-rich amorphous region.
采用甚高频等离子体增强化学气相沉积(VHF-PECVD)制备了柔性氢化纳米晶硅(nc-Si:H)薄膜太阳能电池,并研究了本征nc-Si:H吸收层初始生长阶段的高结晶本征Si籽晶层对其结构、电学性能以及太阳能电池性能的影响。通过引入高结晶籽晶层,显著增强了本征nc-Si:H吸收层的结晶,导致缺陷密集的非晶硅(a-Si:H)晶界和孕育层厚度减小。具有籽晶层的nc-Si:H太阳能电池的开路电压因富缺陷非晶区域中带电缺陷密度的降低而提高。