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由 Umklapp 散射产生的拓扑边缘态和分数量子霍尔效应。

Topological edge states and fractional quantum Hall effect from umklapp scattering.

机构信息

Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland.

出版信息

Phys Rev Lett. 2013 Nov 8;111(19):196401. doi: 10.1103/PhysRevLett.111.196401. Epub 2013 Nov 4.

Abstract

We study anisotropic lattice strips in the presence of a magnetic field in the quantum Hall effect regime. At specific magnetic fields, causing resonant umklapp scattering, the system is gapped in the bulk and supports chiral edge states in close analogy to topological insulators. In electron gases with stripes, these gaps result in plateaus for the Hall conductivity exactly at the known fillings n/m (both positive integers and m odd) for the integer and fractional quantum Hall effect. For double strips, we find topological phase transitions with phases that support midgap edge states with flat dispersion. The topological effects predicted here could be tested directly in optical lattices.

摘要

我们研究了量子霍尔效应区存在磁场时的各向异性晶格条带。在特定的磁场下,共振 Umklapp 散射会导致系统在体相产生能隙,并支持手性边缘态,这与拓扑绝缘体非常类似。在具有条纹的电子气中,这些能隙导致霍尔电导率在整数和分数量子霍尔效应的已知填充比 n/m(整数和奇数 m)处出现平台。对于双条纹,我们发现了拓扑相变,其中的相支持具有平带色散的中场隙边缘态。这里预测的拓扑效应可以直接在光学晶格中进行测试。

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