Department of Industrial and Manufacturing Engineering, North Dakota State University, Fargo, ND 58108, USA.
Nanoscale Res Lett. 2013 Nov 22;8(1):500. doi: 10.1186/1556-276X-8-500.
In this study, a comprehensive investigation on nano-scale machining of polycrystalline copper structures is carried out by molecular dynamics (MD) simulation. Simulation cases are constructed to study the impacts of grain size, as well as various machining parameters. Six polycrystalline copper structures are produced, which have the corresponding equivalent grain sizes of 5.32, 6.70, 8.44, 13.40, 14.75, and 16.88 nm, respectively. Three levels of depth of cut, machining speed, and tool rake angle are also considered. The results show that greater cutting forces are required in nano-scale polycrystalline machining with the increase of depth of cut, machining speed, and the use of the negative tool rake angles. The distributions of equivalent stress are consistent with the cutting force trends. Moreover, it is discovered that in the grain size range of 5.32 to 14.75 nm, the cutting forces and equivalent stress increase with the increase of grain size for the nano-structured copper, while the trends reserve after the grain size becomes even higher. This discovery confirms the existence of both the regular Hall-Petch relation and the inverse Hall-Petch relation in polycrystalline machining, and the existence of a threshold grain size allows one of the two relations to become dominant. The dislocation-grain boundary interaction shows that the resistance of the grain boundary to dislocation movement is the fundamental mechanism of the Hall-Petch relation, while grain boundary diffusion and movement is the reason of the inverse Hall-Petch relation.
本研究通过分子动力学(MD)模拟对多晶铜结构的纳米级加工进行了全面研究。构建了模拟案例,以研究晶粒尺寸以及各种加工参数的影响。制作了六个多晶铜结构,其相应的等效晶粒尺寸分别为 5.32、6.70、8.44、13.40、14.75 和 16.88nm。还考虑了三个深度切削、加工速度和刀具前角水平。结果表明,随着深度切削、加工速度的增加和使用负刀具前角,纳米级多晶加工需要更大的切削力。等效应力分布与切削力趋势一致。此外,发现在 5.32 至 14.75nm 的晶粒尺寸范围内,对于纳米结构铜,切削力和等效应力随晶粒尺寸的增加而增加,而在晶粒尺寸变得更高后,趋势保持不变。这一发现证实了多晶加工中存在常规 Hall-Petch 关系和逆 Hall-Petch 关系,并且存在一个晶粒尺寸阈值,使得两个关系中的一个占主导地位。位错-晶界相互作用表明,晶界对位错运动的阻力是 Hall-Petch 关系的基本机制,而晶界扩散和运动是逆 Hall-Petch 关系的原因。