Center of Materials Technology and Photonics & Electrical Engineering Department, Technological Educational Institute (TEI) of Crete , Heraklion 71004 Crete, Greece.
ACS Appl Mater Interfaces. 2014 Jan 8;6(1):388-93. doi: 10.1021/am4044618. Epub 2013 Dec 13.
Results on electron field emission (FE) from reduced graphene oxide (rGO):poly(3-hexylthiophene) (P3HT) composite layers are presented. Three different FE cathodes were tested and compared: rGO layers on (a) n(+)-Si, (b) composite films with different rGO:P3HT ratios, (c) rGO layers on composite films with different rGO:P3HT ratios. Experiments show that there is a critical rGO:P3HT ratio in which the field-emission performance is remarkably improved. Notably, such performance is always superior to that of the optimum rGO/n(+)-Si cathode. On the contrary, it is inferior to that attained upon deposition of a second rGO layer on top of the rGO:P3HT composite showed the best FE performance that showed turn-on field of as low as ~0.9 V/μm and field enhancement factor of ~1900. The contributions of the composite film morphology as well as the role of rGO sheet-substrate interaction on the emission performance are evaluated and discussed.
呈现了还原氧化石墨烯（rGO）：聚（3-己基噻吩）（P3HT）复合材料层的电子场发射（FE）结果。测试并比较了三种不同的 FE 阴极：（a）n（+）-Si 上的 rGO 层、（b）具有不同 rGO：P3HT 比的复合薄膜、（c）具有不同 rGO：P3HT 比的复合薄膜上的 rGO 层。实验表明，在 FE 性能显著提高的临界 rGO：P3HT 比存在。值得注意的是，这种性能始终优于最佳 rGO/n（+）-Si 阴极的性能。相反，在 rGO：P3HT 复合材料上沉积第二层 rGO 层的性能要差一些，其表现出的开启场低至约 0.9 V/μm，场增强因子约为 1900。评估并讨论了复合薄膜形态以及 rGO 片-基底相互作用对发射性能的贡献。
