Opt Lett. 2013 Nov 15;38(22):4825-8. doi: 10.1364/OL.38.004825.
We demonstrate an array of erbium-doped waveguide-distributed feedback lasers on an ultra-low-loss Si(3)N(4) platform. Sidewall gratings providing the lasing feedback are defined in the silicon-nitride layer using 248 nm stepper lithography, while the gain is provided by a reactive co-sputtered erbium-doped aluminum-oxide layer. We observe lasing output over a 12 nm wavelength range (1531-1543 nm) from the array of five separate lasers. Output powers of 8 μW and lasing linewidths of 501 kHz are obtained. Single-mode operation is confirmed, with side-mode suppression ratios over 35 dB for all designs.
我们在超低损耗 Si(3)N(4) 平台上展示了一系列掺铒波导分布式反馈激光器。使用 248nm 分步光刻机在氮化硅层中定义提供激光反馈的侧壁光栅，而增益则由反应共溅射的掺铒氧化铝层提供。我们观察到来自五个独立激光器的阵列在 12nm 波长范围内（1531-1543nm）的激光输出。获得了 8μW 的输出功率和 501kHz 的激光线宽。所有设计均确认实现了单模操作，边模抑制比超过 35dB。
