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CuIn(1-x)Al(x)Se2/ZnO 异质结构的输运性质及其在低成本薄膜光伏中的应用

Transport properties of CuIn(1-x)Al(x)Se2/AZnO heterostructure for low cost thin film photovoltaics.

机构信息

Materials Research Centre, Indian Institute of Science, Bangalore-560012, India.

出版信息

Dalton Trans. 2014 Feb 7;43(5):1974-83. doi: 10.1039/c3dt52515e.

DOI:10.1039/c3dt52515e
PMID:24336980
Abstract

CuIn(1-x)Al(x)Se2 (CIASe) thin films were grown by a simple sol-gel route followed by annealing under vacuum. Parameters related to the spin-orbit (ΔSO) and crystal field (ΔCF) were determined using a quasi-cubic model. Highly oriented (002) aluminum doped (2%) ZnO, 100 nm thin films, were co-sputtered for CuIn(1-x)Al(x)Se2/AZnO based solar cells. Barrier height and ideality factor varied from 0.63 eV to 0.51 eV and 1.3186 to 2.095 in the dark and under 1.38 A.M 1.5 solar illumination respectively. Current-voltage characteristics carried out at 300 K were confined to a triangle, exhibiting three limiting conduction mechanisms: Ohms law, trap-filled limit curve and SCLC, with 0.2 V being the cross-over voltage, for a quadratic transition from Ohm's to Child's law. Visible photodetection was demonstrated with a CIASe/AZO photodiode configuration. Photocurrent was enhanced by one order from 3 × 10(-3) A in the dark at 1 V to 3 × 10(-2) A upon 1.38 sun illumination. The optimized photodiode exhibits an external quantum efficiency of over 32% to 10% from 350 to 1100 nm at high intensity 17.99 mW cm(-2) solar illumination. High responsivity Rλ ~ 920 A W(-1), sensitivity S ~ 9.0, specific detectivity D* ~ 3 × 10(14) Jones, make CIASe a potential absorber for enhancing the forthcoming technological applications of photodetection.

摘要

CuIn(1-x)Al(x)Se2 (CIASe) 薄膜通过简单的溶胶-凝胶途径生长,然后在真空下退火。使用准立方模型确定了与自旋轨道(ΔSO)和晶体场(ΔCF)相关的参数。高度取向的(002)掺铝(2%)氧化锌,100nm 厚的薄膜,为 CuIn(1-x)Al(x)Se2/AlZnO 基太阳能电池共溅射。在黑暗中和 1.38 A.M 1.5 太阳光照下,势垒高度和理想因子分别从 0.63 eV 变化到 0.51 eV 和 1.3186 到 2.095。在 300 K 下进行的电流-电压特性被限制在一个三角形内,表现出三种极限传导机制:欧姆定律、陷阱填充限制曲线和 SCLC,0.2 V 是交叉电压,从欧姆定律到肖克利定律的二次转变。CIASe/AZO 光电二极管结构证明了可见光的光电检测。在 1 V 的黑暗中,光电流从 3×10(-3) A 增强到 1.38 太阳光照下的 3×10(-2) A。优化后的光电二极管在高强度 17.99 mW cm(-2) 太阳光照下,在 350 到 1100nm 范围内,外量子效率超过 32%至 10%。高响应率 Rλ920 A W(-1),灵敏度 S9.0,特定探测率 D*~3×10(14) Jones,使 CIASe 成为增强光电探测即将到来的技术应用的潜在吸收剂。

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