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在微间隙电极上选择性生长 ZnO 纳米棒及其在紫外光传感器中的应用。

Selective growth of ZnO nanorods on microgap electrodes and their applications in UV sensors.

机构信息

Nano Biochip Research Group, Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis 01000, Malaysia.

出版信息

Nanoscale Res Lett. 2014 Jan 15;9(1):29. doi: 10.1186/1556-276X-9-29.

Abstract

Selective area growth of ZnO nanorods is accomplished on microgap electrodes (spacing of 6 μm) by using a facile wet chemical etching process. The growth of ZnO nanorods on a selected area of microgap electrode is carried out by hydrothermal synthesis forming nanorod bridge between two electrodes. This is an attractive, genuine, direct, and highly reproducible technique to grow nanowire/nanorod onto the electrodes on selected area. The ZnO nanorods were grown at 90°C on the pre-patterned electrode system without destroying the electrode surface structure interface and geometry. The ZnO nanorods were tested for their application in ultraviolet (UV) sensors. The photocurrent-to-dark (Iph/Id) ratio was 3.11. At an applied voltage of 5 V, the response and recovery time was 72 and 110 s, respectively, and the response reached 2 A/W. The deposited ZnO nanorods exhibited a UV photoresponse that is promising for future cost-effective and low-power electronic UV-sensing applications.

摘要

通过使用简单的湿法化学刻蚀工艺,在微间隙电极(间隔 6μm)上实现了 ZnO 纳米棒的选择区域生长。通过在两个电极之间形成纳米棒桥的水热合成,在微间隙电极的选定区域上进行了 ZnO 纳米棒的生长。这是一种有吸引力的、真实的、直接的和高度可重复的技术,可将纳米线/纳米棒生长到选定区域的电极上。在 90°C 下,在预图案化的电极系统上生长 ZnO 纳米棒,而不会破坏电极表面结构界面和几何形状。对 ZnO 纳米棒进行了应用于紫外(UV)传感器的测试。光电流与暗电流(Iph/Id)的比值为 3.11。在 5V 的外加电压下,响应和恢复时间分别为 72 和 110s,响应达到 2A/W。沉积的 ZnO 纳米棒表现出了紫外光响应,有望在未来实现具有成本效益和低功耗的电子紫外感应应用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6f93/3912502/1918728d4062/1556-276X-9-29-1.jpg

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