National Nano Device Laboratories, No, 27, Nanke 3rd Rd,, Xinshi District, Tainan 74147, Taiwan.
Nanoscale Res Lett. 2014 Jan 15;9(1):32. doi: 10.1186/1556-276X-9-32.
We demonstrate that heterojunction photovoltaics based on hydrothermal-grown In2S3 on p-Si were fabricated and characterized in the paper. An n-type In2S3 nanoflake-based film with unique 'cross-linked network' structure was grown on the prepared p-type silicon substrate. It was found that the bandgap energy of such In2S3 film is 2.5 eV by optical absorption spectra. This unique nanostructure significantly enhances the surface area of the In2S3 films, leading to obtain lower reflectance spectra as the thickness of In2S3 film was increased. Additionally, such a nanostructure resulted in a closer spacing between the cross-linked In2S3 nanostructures and formed more direct conduction paths for electron transportation. Thus, the short-circuit current density (Jsc) was effectively improved by using a suitable thickness of In2S3. The power conversion efficiency (PCE, η) of the AZO/In2S3/textured p-Si heterojunction solar cell with 100-nm-thick In2S3 film was 2.39%.
我们证明了基于水热生长的 In2S3 在 p-Si 上的异质结光伏器件的制备和特性。在本文中，我们在制备的 p 型硅衬底上生长了具有独特“交联网络”结构的 n 型 In2S3 纳米片基薄膜。通过光学吸收光谱发现，这种 In2S3 薄膜的带隙能为 2.5 eV。这种独特的纳米结构显著增加了 In2S3 薄膜的表面积，导致随着 In2S3 薄膜厚度的增加，反射率谱更低。此外，这种纳米结构导致交联 In2S3 纳米结构之间的间距更近，并为电子传输形成了更多直接的传导路径。因此，通过使用合适厚度的 In2S3 可以有效提高短路电流密度（Jsc）。具有 100nm 厚 In2S3 薄膜的 AZO/In2S3/纹理化 p-Si 异质结太阳能电池的功率转换效率（PCE，η）为 2.39%。
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