Institut für Organische Chemie and Center for Nanosystems Chemistry, Universität Würzburg , and ‡Experimentelle Physik VI, Universität Würzburg and Bavarian Center for Applied Energy Research (ZAE Bayern e.V.), Am Hubland, 97074 Würzburg, Germany.
J Am Chem Soc. 2014 Feb 12;136(6):2351-62. doi: 10.1021/ja409496r. Epub 2014 Jan 30.
We have synthesized a series of dipolar squaraine dyes that contain dicyanovinyl groups as acceptor and benzannulated five-membered ring heterocycles with alkyl chains of varied length as donor moieties. Based on these squaraines, thin-film transistors (TFT) were fabricated by spin coating and solution shearing. Moreover, with one of these squaraine derivatives vacuum-deposited TFTs were prepared as well. Our detailed studies revealed that the transistor performance of the present series of squaraines is strongly dependent on their structural features as well as on the processing method of thin films. Thus, solution-sheared OTFTs of selenium squaraine bearing dodecyl substituents (denoted as Se-SQ-C12) performed best with a maximum hole mobility of 0.45 cm(2) V(-1) s(-1), which is by far the highest value yet reported for OTFTs based on squaraines. This value was even surpassed by vacuum-deposited thin films of n-butyl-substituted selenium squaraine Se-SQ-C4, the only sublimable compound in this series, exhibiting a record hole mobility of 1.3 cm(2) V(-1) s(-1). Furthermore, we have investigated the morphology of the thin films and the molecular packing of these squaraine dyes by optical spectroscopy, atomic force microscopy, and X-ray diffraction. These studies revealed a relationship between the molecular structure, packing motif, thin-film morphology, and transistor performance of the squaraine dyes. From the supramolecular point of view two packing features discovered in the single crystal structure of Se-SQ-C8 are of particular interest with regard to the structure-functionality relationship: The first is the slipped and antiparallel π-stacking motif which ensures cancellation of the molecules' dipole moments and J-type absorption band formation in thin films. The second is the presence of CN···Se noncovalent bonds which show similarities to the more common halogen-bonding interactions and which interconnect the individual one-dimensional slipped π-stacks, thus leading to two-dimensional percolation pathways along the source-drain direction.
我们合成了一系列含有二氰基乙烯基作为受体和带有不同长度烷基链的苯并稠合五元杂环作为供体部分的偶极 squaraine 染料。基于这些 squaraines,通过旋转涂层和溶液剪切制备了薄膜晶体管 (TFT)。此外,还通过真空沉积制备了这些 squaraine 衍生物之一的 TFT。我们的详细研究表明,本系列 squaraines 的晶体管性能强烈依赖于它们的结构特征以及薄膜的处理方法。因此,带有十二烷基取代基的硒 squaraine 的溶液剪切 OTFT(表示为 Se-SQ-C12)表现最佳,空穴迁移率最高为 0.45 cm(2) V(-1) s(-1),这是迄今为止基于 squaraines 的 OTFT 报道的最高值。这一值甚至超过了该系列中唯一可升华的化合物正丁基取代硒 squaraine Se-SQ-C4 的真空沉积薄膜,其空穴迁移率达到了创纪录的 1.3 cm(2) V(-1) s(-1)。此外,我们通过光学光谱、原子力显微镜和 X 射线衍射研究了这些 squaraine 染料的薄膜形态和分子堆积。这些研究揭示了 squaraine 染料的分子结构、堆积模式、薄膜形态和晶体管性能之间的关系。从超分子的角度来看,在 Se-SQ-C8 的单晶结构中发现的两种堆积特征在结构-功能关系方面特别有趣:第一个是滑移和反平行π-堆积模式,它确保了分子偶极矩的抵消和在薄膜中形成 J 型吸收带。第二个是存在 CN···Se 非共价键,它与更常见的卤键相互作用相似,并将单个一维滑移 π-堆积相互连接,从而沿着源漏方向形成二维渗透途径。