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肖特基或欧姆金属-半导体接触:对 Ag/ZnO 和 Pt/ZnO 模型系统光催化效率的影响。

Schottky or Ohmic metal-semiconductor contact: influence on photocatalytic efficiency of Ag/ZnO and Pt/ZnO model systems.

机构信息

Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002 (PR China).

出版信息

ChemSusChem. 2014 Jan;7(1):101-4. doi: 10.1002/cssc.201300818. Epub 2013 Nov 4.

Abstract

The relationship between the contact type in metal-semiconductor junctions and their photocatalytic efficiencies is investigated. Two metal-semiconductor junctions, silver on zinc oxide (Ag/ZnO) and platinum on zinc oxide (Pt/ZnO) serve as model system for Ohmic and Schottky metal-semiconductor contact, respectively. Ag/ZnO, with Ohmic contact, exhibits a higher photocatalytic efficiency than Pt/ZnO, with Schottky contact. The direction of electric fields within the semiconductor is found to play a crucial role in the separation of photogenerated charges, and thus strongly influences the photocatalytic efficiency.

摘要

研究了金属-半导体结的接触类型与其光催化效率之间的关系。银锌氧化物(Ag/ZnO)和铂锌氧化物(Pt/ZnO)这两种金属-半导体结作为欧姆和肖特基金属-半导体接触的模型系统。具有欧姆接触的 Ag/ZnO 表现出比具有肖特基接触的 Pt/ZnO 更高的光催化效率。发现半导体内部电场的方向在光生载流子的分离中起着至关重要的作用,因此强烈影响光催化效率。

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