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界面效应对高度外延 LaBaCo2O(5.5+δ) 薄膜中电子输运性质的影响。

Interface effects on the electronic transport properties in highly epitaxial LaBaCo2O(5.5+δ) films.

机构信息

Department of Physics and Astronomy, University of Texas at San Antonio , San Antonio, Texas 78249, United States.

出版信息

ACS Appl Mater Interfaces. 2014 Feb 26;6(4):2540-5. doi: 10.1021/am404951v. Epub 2014 Feb 5.

DOI:10.1021/am404951v
PMID:24467686
Abstract

Single-crystalline perovskite LaBaCo2O5.5+δ thin films were grown on a (110) NdGaO3 single-crystal substrate in order to systematically investigate the effect of lattice mismatch on the electrical transport properties in comparison to the films on LaAlO3, SrTiO3, and MgO substrates. Microstructure studies reveal that all of the LaBaCo2O5.5+δ films are of excellent quality with atomically sharp interface structures. The electrical and magnetic transport property studies indicate that the resistivity, magnetoresistance, and magnetic moment of the film are very sensitive to the substrate materials because of the lattice mismatch/interface strain. The Curie temperature, however, is almost independent of the strain imposed by the substrate, probably because of the strong coupling between the nanodomain boundary and interface strain.

摘要

为了系统研究晶格失配对薄膜电输运性能的影响,我们在(110)NdGaO3 单晶衬底上生长了单晶钙钛矿 LaBaCo2O5.5+δ 薄膜,并与 LaAlO3、SrTiO3 和 MgO 衬底上的薄膜进行了比较。微结构研究表明,所有的 LaBaCo2O5.5+δ 薄膜都具有优异的质量,界面结构原子级陡峭。电输运和磁输运性能研究表明,由于晶格失配/界面应变,薄膜的电阻率、磁电阻和磁矩对衬底材料非常敏感。然而,居里温度几乎与衬底施加的应变无关,这可能是由于纳米畴界与界面应变之间的强耦合作用。

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Anisotropic Strain Induced Directional Metallicity in Highly Epitaxial LaBaCoO Thin Films on (110) NdGaO.在(110)NdGaO 上高度外延的 LaBaCoO 薄膜中,各向异性应变诱导的定向金属性。
Sci Rep. 2016 Nov 21;6:37337. doi: 10.1038/srep37337.
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