Department of Chemistry and Biochemistry, University of California-Santa Barbara, Santa Barbara, CA, 93106, U.S.
Adv Mater. 2014 May;26(17):2755-61, 2618. doi: 10.1002/adma.201304419. Epub 2014 Jan 28.
An approach based on a solution-based synthesis that produces a thermally stable Ag/oxide/S₂ Te₃ -Te metal-semiconductor heterostructure is described. With this approach, a figure of merit of zT = 1.0 at 460 K is achieved, a record for a heterostructured material made using wet chemistry. Combining experiments and theory shows that the large increase in the material's Seebeck coefficient results from hot carrier filtering.
本文描述了一种基于溶液合成的方法，该方法可制备出热稳定的 Ag/氧化物/S₂ Te₃-Te 金属-半导体异质结构。采用该方法，在 460 K 时获得了 zT = 1.0 的优值，创下了使用湿化学法制备的异质结构材料的记录。实验与理论相结合表明，材料的 Seebeck 系数的大幅提高源于热载流子过滤。
