Bendavid Leah Isseroff, Carter Emily Ann
Princeton University, Princeton, NJ, USA.
Top Curr Chem. 2014;347:47-98. doi: 10.1007/128_2013_503.
Characterization of excitations in transition metal oxides is a crucial step in the development of these materials for photonic and optoelectronic applications. However, many transition metal oxides are considered to be strongly correlated materials, and their complex electronic structure is challenging to model with many established quantum mechanical techniques. We review state-of-the-art first-principles methods to calculate charged and neutral excited states in extended materials, and discuss their application to transition metal oxides. We briefly discuss developments in density functional theory (DFT) to calculate fundamental band gaps, and introduce time-dependent DFT, which can model neutral excitations. Charged excitations can be described within the framework of many-body perturbation theory based on Green's functions techniques, which predominantly employs the GW approximation to the self-energy to facilitate a feasible solution to the quasiparticle equations. We review the various implementations of the GW approximation and evaluate each approach in its calculation of fundamental band gaps of many transition metal oxides. We also briefly review the related Bethe-Salpeter equation (BSE), which introduces an electron-hole interaction between GW-derived quasiparticles to describe accurately neutral excitations. Embedded correlated wavefunction theory is another framework used to model localized neutral or charged excitations in extended materials. Here, the electronic structure of a small cluster is modeled within correlated wavefunction theory, while its coupling to its environment is represented by an embedding potential. We review a number of techniques to represent this background potential, including electrostatic representations and electron density-based methods, and evaluate their application to transition metal oxides.
表征过渡金属氧化物中的激发态是将这些材料用于光子和光电子应用开发的关键步骤。然而,许多过渡金属氧化物被认为是强关联材料,其复杂的电子结构对许多已有的量子力学技术来说建模具有挑战性。我们综述了用于计算扩展材料中带电和中性激发态的最新第一性原理方法,并讨论它们在过渡金属氧化物中的应用。我们简要讨论了密度泛函理论(DFT)在计算基本带隙方面的进展,并介绍了含时DFT,它可以对中性激发态进行建模。带电激发态可以在基于格林函数技术的多体微扰理论框架内进行描述,该理论主要采用自能的GW近似来促进准粒子方程的可行求解。我们综述了GW近似的各种实现方式,并评估了每种方法在计算许多过渡金属氧化物基本带隙方面的表现。我们还简要回顾了相关的贝叶斯 - 萨尔皮特方程(BSE),它在GW导出的准粒子之间引入电子 - 空穴相互作用以准确描述中性激发态。嵌入关联波函数理论是另一个用于对扩展材料中的局域中性或带电激发态进行建模的框架。在这里,小团簇的电子结构在关联波函数理论内进行建模,而其与环境的耦合由嵌入势表示。我们综述了一些表示这种背景势的技术,包括静电表示和基于电子密度的方法,并评估了它们在过渡金属氧化物中的应用。